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  • 1
    Electronic Resource
    Electronic Resource
    Thin-film temperature rise estimates during low energy ion bombardment in a plasma reactor (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2472-2474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical estimates of the temperature distributions are obtained in structures where thin copper films mounted on special membrane wafer transmission electron microscopy (TEM) specimens are exposed to low energy (63–114 eV) ion bombardment in a magnetically enhanced (ME) plasma reactor. The substrate temperatures are experimentally measured as a function of rf power in the plasma reactor and of time. The temperature rise in the copper films is obtained based on a two-dimensional heat transfer finite element analysis with input of a heat flux at the surface due to ion bombardment. The results indicate that copper heating due to ion bombardment is minimal because of rapid heat transfer through the underlying structure and the observed microstructural changes in copper films during plasma processing must be attributed to other causes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113999
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Ti deposition temperature on TiSix resistivity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 877-878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Ti deposition temperature on the resistivity of as-deposited films are reported. The microstructure of as-deposited Ti films and its effect on electrical properties of TiSix formed during subsequent thermal annealing are investigated. Our work shows that the film deposition temperature not only affects the resistivity of as-deposited film but also influences the resistivity of TiSix formed during thermal anneals. The microstructure, specifically the grain size, of as-deposited Ti films appears to be the controlling factor in formation of TiSix phases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113417
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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