Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 3608-3610
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Strong photoluminescence between 3 and 4 μm was observed at temperatures as high as 55 °C from PbSe/PbSrSe multiple-quantum-well structures grown on BaF2 (111) substrates by molecular-beam epitaxy. Fabry–Perot interference fringes dominated the spectra, indicating that the luminescence was primarily due to stimulated emission processes. Peak emission energies were determined by fitting Gaussian functions to the spectra, and they showed that emission energies at 25 °C decreased from 402 to 312 meV as quantum-well thickness increased from 40 to 200 Å. The temperature tuning coefficient was also observed to decrease from 0.400 meV/K for a 200 Å multiple-quantum-well sample to 0.313 meV/K for a 40 Å multiple-quantum-well sample. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125403
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