Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 4739-4744
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this article, we report on transport across n+(p+) c-Si/AlQ/Al junctions where AlQ is tris(8-hydroxy quinolato)aluminum, and n+ and p+ are n and p type degenerately doped crystalline silicon (c-Si). Specifically, we show that n+ c-Si is a very efficient electron injector into AlQ. We have studied the temperature and thickness dependence of AlQ on the current–voltage characteristics to understand transport in AlQ. From these measurements, we show that transport in AlQ is injection limited and the current is limited by tunneling injection from the contact into AlQ. We also report on the influence of the interface and gap states on transport in AlQ. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1311306
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |