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  • 1
    Electronic Resource
    Electronic Resource
    Very dense 102-laser arrays with extremely low threshold current (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 319-321 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 102-laser arrays with a period of 4.5 μm were fabricated using single-step metalorganic chemical vapor deposition and were operated uniformly with a threshold current of 1.8 mA per laser and a total output power of 850 mW/facet under continuous wave conditions at room temperature. The active layer of each laser, which was grown on a periodic-ridge-shaped GaAs substrate and was of a multi quantum well structure, was separated from the active layer of adjacent lasers by a current blocking layer, so each laser operated in a stable fundamental lateral mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105225
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication methods for InGaAsP/GaAs visible laser structure with AlGaAs burying layers grown by liquid-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 761-768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid-phase-epitaxial (LPE) growth of AlGaAs layers has been used in fabricating InGaAsP buried heterostructure visible lasers on GaAs substrate. InGaAsP/InGaAsP double heterostructure wafers were grown on the p-type GaAs substrates by means of the melt-back method prior to the LPE growth for eliminating phosphorus contamination. An SiO2 film mask was deposited on the epitaxial wafer surface by the rf sputtering, and photoetched with stripes of 7–10 μm width in the 〈110〉 direction. After etching to the first p-InGaAsP cladding layer with a 3% Br-methanol solution, the second LPE growth of n-AlGaAs and p-GaAs layers was carried out. The InGaAsP active region is entirely surrounded by the InGaAsP cladding layers and the AlGaAs burying layer, therefore, it becomes possible to provide both lateral and vertical carrier and optical confinements. I-L characteristics were measured at room temperature under pulsed operation, but the lasing action was not obtained. The peak wavelength of the electroluminescence was 785 nm. The transverse mode behavior was analyzed by means of the effective refractive index approximation. And it seemed that this buried heterostructure is suitable for the transverse mode control of InGaAsP visible laser diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337034
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Monolithic-integrated two-wavelength laser diodes for digital-versatile-disk/compact-disk playback (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2270-2272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a monolithic two-wavelength laser diode, which emits 650 and 780 nm wavelengths. This device, which has a separated-confinement-heterostructure multi-quantum-well active region and a gain-guiding tapered-stripe structure, is fabricated using only two steps of metal organic chemical vapor deposition. The operating currents at 5 mW are 57.0 and 61.5 mA for the 650 and 780 nm elements, respectively. The relative intensity noise of the 650 and 780 nm elements was below −130 dB/Hz up to 70 °C without high-frequency superposition circuits. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360231
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of InGaAsP surface treatment for indium-tin-oxide/InGaAsP/GaAs solar cells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3337-3341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performances of n-indium-tin-oxide (ITO)/n-InGaAsP/p-GaAs solar cells in which the chemical treatment at the ITO/InGaAsP heterointerface is varied are compared: HNO3 treatment, HCl treatment, and nontreatment. The cells with HNO3 treatment show good solar-cell performance in spite of large lattice mismatch between ITO and InGaAsP. Others do not show even rectifying behavior. The structure of the cells with HNO3 treatment is thought to be a semiconductor-insulator-semiconductor structure, and its current model follows the tunneling model. By Auger analysis the oxide layer, which is thought to be formed by HNO3 treatment, was ascertained. Using the heterostructure back-surface field for the cells with HNO3 treatment, the highest efficiency attained so far is 10.9% (total area) under AM1 illumination normalized to 100 mW/cm2; the corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.56 V, 28.8 mA/cm2, and 0.677, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344130
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  • 5
    Electronic Resource
    Electronic Resource
    A Differential Phase Detection Method for Tracking-Error Signals Using a Monolithic Confocal Laser Coupler (1999)
    Springer
    Optical review 6 (1999), S. 308-313 
    Details
    ISSN: 1349-9432
    Keywords: optical memories ; optical pick-up ; tracking-error signal detection ; confocal optics ; GaAs laser diode ; GaAs photodiode
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We previously presented the differential phase detection method using a monolithic confocal laser coupler with a confocal knife edge structure (the CKE device), which we call the CKE Pit-Edge method and which is applied to an optical disk system in which the disk has a pit depth of λ/4n. In this paper, the experimental results using this new method are reported. The experimental results agree well with the calculated results. Thus, tracking-error signals, which are very stable in the face of radial lens displacement, can be obtained for an optical disk with any pit depth using the CKE Push-Pull method and the CKE Pit-Edge method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s10043-999-0308-9
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    Paper (German National Licenses)
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