ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Triisopropyl indium (TIPIn) has been investigated as an alternative to trimethyl indium for use in chemical-beam epitaxy (CBE). In previous CBE studies of GaAs/AlGaAs growth, the replacement of methyl-containing precursors with ethyl- and isopropyl-containing precursors has been shown both to widen the substrate temperature window available for growth, and also to reduce unintentional carbon incorporation in the grown layers. In the present study of (100)InxGa1−xAs (0≤x≤0.1) growth using the new TIPIn source, in situ modulated-beam mass spectrometry studies have demonstrated a similar, and technologically very important, widening of the substrate temperature window. Furthermore, use of the new precursor combination, TIPIn and triisopropyl gallium, is also shown to generate state-of-the-art InGaAs material with electrical and optical properties directly comparable to corresponding material grown using molecular-beam epitaxy. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360872
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