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  • 1
    Electronic Resource
    Electronic Resource
    Experimental study of electron generation induced by a XeCl laser (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3769-3775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of photoelectrons by an incident XeCl laser beam of 4.02 eV photon energy on three different targets, Y, Zn, and Ge, having work functions of 2.9, 3.9, and 4.8 eV, respectively, has been studied. Considering that the laser pulse has a trapezoidal evolution time and a rectangular spatial dependence, the evolution of the target temperature at the laser spot has been calculated. Using the computer code egun, the output current picked up by the collector resulted only of 44%, 42%, and 37% of the effective current for Y, Zn, and Ge, respectively, at 3 kV charging voltage. By utilizing the generalized Richardson equation which governs the generated current density, the dominant process existing during the laser-matter interaction has been determined. During the electron extraction, plasma was formed on the target surface particularly at high laser energies and high accelerating voltages. This plasma introduces an impedance into the cathode-anode region which shifts the Child–Langmuir law.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357380
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  • 2
    Electronic Resource
    Electronic Resource
    Volume and surface photoemission from a niobium target by polarized ultraviolet radiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3596-3599 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This work reports on the experimental results of a Nb photocathode stimulated by two different lasers, of wavelengths 308 and 222 nm. A fast current detector, Rogowski coil, recorded the high output currents, while the beam angular distributions were measured by an array of small Faraday cups placed along the propagation axis of the beam. With p-polarized light, we found quantum efficiencies (QEs) of 1.6×10−5 and 1.0×10−6 for λ=222 nm and λ=308 nm, respectively. The efficiency of the photocathode was measured to be higher for s-polarized laser beams than for the p-polarized ones. They resulted in QEs of 5.3×10−5 and 2.1×10−6 for λ=222 nm and λ=308 nm, respectively. From the electron-beam angular divergence values, we determined the upper limit emittance. The lowest upper limit normalized emittance value found was 7 (π mm mrad), achieved by the s-polarized radiation of 308 nm. In both cases the s-polarized light generated electron beams of lower emittance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391441
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  • 3
    Electronic Resource
    Electronic Resource
    Generation and characterization of high intensity electron beams generated from rough photocathodes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4221-4224 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this work, the generation and the characterization of high current electron beams from rough photocathodes induced by an ultraviolet excimer laser are reported. The cathodes were rough Cu disks. In order to study the influence of the cathode surface, the electron emission from different surface roughnesses was investigated. To establish the electromagnetic and geometric parameters a Rogowski coil and a new slit–slit emittance meter were used. The laser beam utilized was obtained by a mixture of Kr and Cl which generated coherent light at 222 nm. Fixing the laser energy at 0.5 mJ and the laser spot into 4 mm2, the maximum current as well as the maximum emittance value were obtained with the cathode that had the highest surface roughness which resulted in 1 A and 46 π mm mrad, respectively. A low current and a low emittance were obtained with the cathode that had the lowest roughness, namely, 410 mA and 19 π mm mrad, respectively. A quantum efficiency value of 1.2×10−4 was reached with the cathode with the highest amount of roughness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150055
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of high charge electron beams induced by excimer laser irradiation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3277-3281 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This work reports on electron beam characteristics obtained from a Cu photocathode utilizing an UV excimer laser of 222 nm for the first time. The values of the current, emittance, and brightness of the electron beams generated are reported. A suitable slit–slit emittance meter was developed to assess the electron beam emittance. This instrument allowed us to determine the electron beam phase-space areas by slicing the beam in small beamlets and measuring the beamlet direction distributions. Small Faraday cups placed after the slits were utilized to this reason. The laser beam was focused in a 4 mm2 spot and the maximum energy laser was established to 0.5 mJ. The highest current was 410 mA and the corresponding normalized emittance value was 10 π mm mrad corresponding to 80% of the total points. From these data the beam quality, expressed as normalized beam brightness, resulted in 4.1×109 A[π m rad]−2 and the quantum efficiency was 4.6×10−5. By increasing the KrCl laser spot and its energy a very charge electron beam was extracted of 16.4 A. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149904
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  • 5
    Electronic Resource
    Electronic Resource
    Excimer laser induced electron beams on an Al target: Plasma effect in a "nonplasma'' regime (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3883-3887 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Experiments on electron-beam generation from an Al target illuminated by XeCl and KrCl excimer lasers were carried out under plasma ignition threshold intensities. Direct experimental evidence of such a plasma formation under ignition threshold is given for the first time. By Langmuir-like probe measurements, positive potentials as large as 0.36 and 0.75 V at distances down to about 2 μm from the grounded target over the laser spot area were reproducibly observed during the XeCl and KrCl laser action, respectively. From this result and in absence of cathode voltage, an accelerating electric field on the target of about 375 kV/m was estimated. The highest positive charge density near the cathode that resulted was about 3.3 mC/m3. The strong electric field caused by the plasma formation modified the acceleration conditions for a space-charge dominated electron beam and it should be the main cause of the discrepancies between the experimental current values and the calculated ones. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145388
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  • 6
    Electronic Resource
    Electronic Resource
    Direct oxinitride synthesis by multipulse excimer laser irradiation of silicon wafers in a nitrogen-containing ambient environment (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2509-2511 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct synthesis of silicon oxinitride films by multipulse excimer (λ=308 nm) laser irradiation in a nitrogen-containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346518
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  • 7
    Electronic Resource
    Electronic Resource
    Discharge impedance of an ultraviolet preionized XeCl laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1168-1171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the experimental results and the theoretical analysis of the discharge impedance and the output performance of an UV preionized XeCl laser. During the breakdown the discharge impedance is time dependent and its value changes as the preionizator changes position. By fitting the experimental results to the results obtained by the equation of the discharge electrical circuit, it is possible to get exactly the electric element values which simulates the discharge impedance. These results are very important to design driving circuit devices which must have an output impedance very close to the laser discharge impedances in order to improve the impedance matching. Papers, which report laser behavior analysis, have utilized laser systems having a fixed preionizator position. In this work, we have found that the laser characteristics, in particular the laser discharge impedance and the output energy, changes as the preionization position changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349624
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  • 8
    Electronic Resource
    Electronic Resource
    Movable Faraday cup for high-intensity electron beam pulses (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 758-759 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple inexpensive movable Faraday cup is described. It is used for current measurements in pulsed electron beam accelerators. Current pulses of tens of killoamps, of 1-ns rise time and up to a few mega-electron-volts of electron energy, can be measured. This cup can be moved along the e-beam drift tube maintaining its response characteristics to study the e-beam evolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138165
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  • 9
    Electronic Resource
    Electronic Resource
    Emission and emittance measurements of electron beams generated from Cu and diamond photocathodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2268-2271 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electron emission from Cu and diamond film cathodes irradiated with two ultraviolet excimer laser beams working at 308 nm XeCl, and 222 nm KrCl. The beam emittance measurements were performed using a new experimental setup composed of two movable slit arrays. The electron beam phase space areas were determined by splitting the beam in small beamlets and measuring the beamlet direction spread via small cups and slits. The highest emission was obtained at the lowest laser wavelength. With a 4 mm2 beam spot and 0.5 mJ laser energy the maximum currents from the Cu and diamond film cathode were 370 and 410 mA, respectively, and the corresponding emittances were 18 and 27 (π mm mrad). From these values the normalized beam brightness was estimated to be 4.6×109 A(π m rad)−2 for the Cu cathode and 2.3×109 A(π m rad)−2 for the diamond cathode. By increasing the laser energy and the spot beam the maximum extracted current was 16.4 A from the Cu cathode with the KrCl laser. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368293
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  • 10
    Electronic Resource
    Electronic Resource
    Multilayer metallization structures with titanium nitride and titanium silicide prepared by multipulse laser irradiation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1225-1227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We synthesized titanium nitride and titanium silicide layers on silicon by only one-step multipulse laser irradiation of titanium-coated silicon wafers in a jet of nitrogen, with characteristics appropriate for utilization in metallization schemes with very large scale integration devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99674
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