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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of interfacial roughness of InxGa1−xAs epitaxial layers on GaAs and InP substrates by soft x-ray reflectivity (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 949-953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The grazing incidence x-ray reflectivity is a nondestructive and sensitive technique for probing the depth profile of electron density in layered structures. This method has been utilized in the soft x-ray regime to determine the roughness of interfaces, and the epilayer thickness in InxGa1−xAs/InP and InxGa1−xAs/GaAs heterostructures, for x=0.57 and x=0.60, grown by molecular beam epitaxy. By fitting the experimental results to our model, assuming uncorrelated interfacial roughness, we conclude that the top surface roughness does not depend on the type of the substrate or presence of stress in the epilayer, and is always smaller than interfacial roughness. The main factors which control the interfacial roughness are the quality of substrate and/or growth conditions rather than strain or lattice mismatch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347338
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Optical properties of InGaAs lattice-matched to InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5314-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical spectra of a molecular-beam-epitaxially grown In0.53Ga0.47As epilayer lattice-matched on a (100) InP substrate are measured in the visible and infrared regions. The transmittance, reflectance, and their wavelength derivatives (wavelength-modulation spectra) are measured at room temperature. The spectra were analyzed by a theoretical spectral line-shape calculation based upon the band structure near the fundamental band gap. The quasidielectric functions and optical constants in the 0.6–3.1 eV range and the critical energies E0, E0+Δ0, E1, and E1+Δ1 are determined by fitting the calculated spectral line shapes to the measured spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347024
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Short-range-order structure of an InGaAs compound semiconductor grown by liquid-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2836-2839 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure has been measured in an In0.53Ga0.47As compound grown by liquid-phase epitaxy. The fluorescence measurement technique was used so as to preserve the integrity of the as-grown sample. Results indicate that the virtual crystal approximation is invalid in this system, and that the structure contains significant disorder in the cation and anion sublattices. The nearest-neighbor environment around each constituent atom, however, appears to be well ordered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337876
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  • 4
    Electronic Resource
    Electronic Resource
    Electronic structure and optical spectra of YBa2Cu3O7−δ thin films in the infrared and UV region (1992)
    Springer
    Applied physics 55 (1992), S. 192-195 
    Details
    ISSN: 1432-0630
    Keywords: 78.65.Ez ; 78.20.Ci ; 74.75.+t
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optical reflectance of YBa2Cu3O7-δ thin films grown by laser ablation is measured within photon energies of 0.1 eV to 3.5 eV at room temperature. The spectra can be fit congruently with the anisotropic dielectric constants which take account of the intraband free carrier transition and interband transition. The anisotropic plasma frequencies are simulated to be ħεpl=2.18 eV and ħεch=2.80 eV contributed from free carriers on the plane and in the chain, respectively. The interband transition occurs near 2.5 eV and is pertinent to a rather broad line width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00334222
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    Paper (German National Licenses)
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