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  • 1
    Electronic Resource
    Electronic Resource
    Chemistry and electronic structure of the H2 plasma passivated surface of CdTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1632-1637 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of low energy H2 plasma exposure on the surface defect chemistry and the electronic structure of CdTe were studied by synchrotron radiation soft x-ray photoemission spectroscopy and optical emission spectroscopy as a function of substrate temperature. The low energy H2 plasma was generated with a commercial electron cyclotron resonance plasma source using pure H2 with the plasma exposure being performed at ambient temperature, 100 °C, and 200 °C. Plasma species were identified with optical emission spectroscopy. In situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence band electronic structure as well as changes in the Cd 4d and Te 4d core lines. The results were correlated in order to relate the plasma species and characteristics to changes in surface defect chemistry and electronic structure. These measurements indicate that the H2 plasma exposure type converts the CdTe(100) surface from p- to n-type and passivates defect states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356376
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  • 2
    Electronic Resource
    Electronic Resource
    Photoemission study of CdS heterojunction formation with binary selenide semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5701-5705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2−xSe and CdS/In6Se7 heterojunction interfaces. Cu2−xSe and In6Se7 layers were deposited on GaAs (100) by physical vapor deposition from Cu2Se and In2Se3 sources. CdS overlayers were then deposited in situ, at room temperature, in steps on these layers. Photoemission measurements were acquired after each growth to observe changes in the valence-band electronic structure and changes in the In4d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and CdS/In6Se7 heterojunction valence-band discontinuities and the consequent heterojunction band diagrams. These results are compared to the valence-band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359629
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  • 3
    Electronic Resource
    Electronic Resource
    Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 269-272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface versus bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se2 thin-film interfaces. Angle-resolved high-resolution photoemission measurements on the valence-band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the surface and near surface chemistry of CuInSe2 and Cu(In,Ga)Se2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near surface region on device performance. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360669
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  • 4
    Electronic Resource
    Electronic Resource
    Scanning photoelectron microscopy study of the laser-induced transformations of polycrystalline CdTe films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3520-3525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used pulsed-laser treatment to provide highly localized chemical reactions in the near-surface region of polycrystalline CdTe thin films. Using scanning photoelectron microscopy, the lateral changes in the composition and morphology of the films as a function of the irradiation conditions and of the distance from the center of the laser beam were characterized. Results show that the films undergo thermal-induced heterogeneity in the morphology and in the lateral distribution of the elements and chemical phases due to local melting and dissociation of the film. This transformation leads to a local increase of the conductivity and enrichment with elemental Te. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372375
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  • 5
    Electronic Resource
    Electronic Resource
    Soft x-ray photoemission characterization of the H2S exposed surface of p-InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6086-6089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation soft x-ray photoemission spectroscopy was used to characterize the surface chemistry of p-InP before and after exposure to H2S gas at ambient temperature. The effect of the H2S dosing was determined by in situ photoemission measurements which were acquired after each gas exposure in order to observe changes in the valence band electronic structure as well as changes in the In 4d, P 2p, and S2p core lines. The results were used to correlate the surface chemistry to the electronic properties. These measurements indicate that the H2S exposure type converts the p-type InP surface to an n-type surface and that the magnitude of the band bending is 0.6 eV resulting in a homojunction interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350415
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  • 6
    Electronic Resource
    Electronic Resource
    Photoemission characterization of the H2 plasma etched surface of InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5619-5622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation soft x-ray photoemission spectroscopy was used to characterize the surface chemistry of InP before and after exposure to a H2 plasma. The low-power H2 plasma was generated with a commercial electron cyclotron resonance plasma source using a mixture of H2 and Ar with the plasma exposure being performed at ambient temperature. Plasma species were identified with quadrupole based mass spectrometry and optical emission spectroscopy. Photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the In 4d and P 2p core lines. The results were correlated in order to relate the plasma species and characteristics to changes in surface chemistry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350176
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  • 7
    Electronic Resource
    Electronic Resource
    Valency and type conversion in CuInSe2 with H2 plasma exposure: A photoemission investigation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8561-8564 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of H2 plasma exposure on CuInSe2 was studied by synchrotron radiation soft-x-ray photoemission spectroscopy. The low-power H2 plasma was generated with a commercial electron cyclotron resonance plasma source using pure H2 with the plasma exposure being performed at 200 °C. In situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the In 4d and Se 3d core lines. The results were correlated in order to relate changes in surface chemistry to the electronic structure. These measurements indicate that the H2 plasma exposure type converts the CuInSe2 surface to an n-type surface as well as converting the In+3 valency state to an In+1 valency state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354063
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  • 8
    Electronic Resource
    Electronic Resource
    Photoemission characterization of the H2 plasma-etched surface of CdS (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5881-5887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of H2 plasma exposure of CdS as a function of substrate temperature was studied by synchrotron radiation soft x-ray photoemission spectroscopy and optical emission spectroscopy. The low-power H2 plasma was generated with a commercial electron cyclotron resonance plasma source using pure H2 with the plasma exposure being performed at ambient temperatures of 100 and 200 °C. Plasma species were identified with optical emission spectroscopy. In situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the Cd 4d and S 2p core lines. The results were correlated in order to relate the plasma species and characteristics to changes in surface chemistry and electronic structure. These measurements indicate that the H2 plasma exposure type converts the CdS surface to an n-type surface and that the magnitude of the band bending is dependent on substrate temperature during plasma exposure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351894
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  • 9
    Electronic Resource
    Electronic Resource
    Soft x-ray photoemission investigation on the effect of In doping in CdS/CuInSe2 heterojunction formation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5888-5891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS(In)/CuInSe2 heterojunction interface. In-doped CdS overlayers were deposited in steps on single-crystal n-type CuInSe2 at 250 °C. Results indicate that the CdS(In) grows in registry with the substrate, initially in a two-dimensional growth mode followed by three-dimensional island growth as is corroborated by reflection high-energy electron diffraction analysis. Photoemission measurements were acquired after each growth in order to observe changes in the valence-band electronic structure. The results were used to correlate the interface chemistry with the electronic structure at these interfaces and to directly determine the CdS(In)/CuInSe2 heterojunction valence-band discontinuity and the consequent heterojunction band diagram as a function of In dopant concentration. We measured a valence-band offset ΔEv=0.3 eV, independent of In doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351895
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  • 10
    Electronic Resource
    Electronic Resource
    Valence-band electronic structure of Zn3P2 as a function of annealing as studied by synchrotron radiation photoemission (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1393-1396 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraviolet photoemission (UPS) utilizing synchrotron radiation has been used to characterize changes in the valence-band electronic structure of crystalline Zn3P2 as a function of annealing temperature. The Zn3P2 crystal was etched in bromine-methanol prior to analysis and annealing was performed in vacuum at 300 and 350 °C after sputter cleaning. The UPS spectra for the virgin material are qualitatively similar to the photoemission results for various II-VI Zn compound semiconductors and a comparison of the Zn 3d binding energies with respect to the valence band maximum is presented. The results for the virgin material and the 300 °C anneal are further compared with the theoretically predicted band structure of Zn3P2 as determined by a pseudopotential energy band calculation. Loss of phosphorus from the surface and the presence of elemental zinc on the surface after the 350 °C anneal is evident.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345695
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