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  • 1
    Electronic Resource
    Electronic Resource
    Lattice distortions in YBa2Cu3O7−δ thin films grown in situ by sequential ion beam sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6710-6712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed epitaxial, c-axis oriented YBa2Cu3O7−δ thin films grown in situ by sequential ion-beam sputtering on (100) SiTiO3 and (100) MgO substrates. X-ray diffraction studies showed the presence of both homogeneous and inhomogeneous lattice distortions along the c-direction. The c-axis lattice parameters ranged from 11.72 to 12.00 A(ring). The broadening of the (00l) Bragg peaks in excess of the broadening due to finite film thickness was found to be due to inhomogeneous lattice distortions. The overall trend in the data shows an increase of the inhomogeneous strains with the enlargement of the c-axis lattice parameter. The inhomogeneous lattice distortions are interpreted as fluctuations in the c-axis lattice parameter. The resistive transitions were found to be correlated to the lattice distortions. We show correlations between the midpoint Tc and the c-axis lattice parameter and between the transition widths and the inhomogeneous lattice distortions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348892
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  • 2
    Electronic Resource
    Electronic Resource
    Columnar epitaxy of PtSi on Si (111) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 686-688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Columnar grains of PtSi surrounded by high quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and Pt in an 8:1 ratio on Si(111) substrates heated to 610–810 °C. The areal density of columns varies from 120 to 3.8 μm−2, and layers with thicknesses from 100 nm to 1 μm have been demonstrated. This result is similar to that found previously for CoSi2 (a nearly lattice-matched cubic-fluorite crystal) on Si(111), in spite of the orthorhombic structure of PtSi. The PtSi grains are also epitaxial and have one of three variants of the relation defined by PtSi(010)//Si(111), with PtSi[001]//Si〈110〉.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103592
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  • 3
    Electronic Resource
    Electronic Resource
    Correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7−δ thin films grown in situ by sequential ion beam sputtering (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2468-2470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the correlations between deposition parameters and structural and electrical properties of YBa2Cu3O7−δ thin films grown in situ by sequential ion beam sputtering. Epitaxial, c-axis oriented YBa2Cu3O7−δ films were grown both on (100) SrTiO3 and on (100) MgO substrates following the stacking sequence of the "123'' compound, with deposited layer thicknesses nominally equal to 1 monolayer. The c-axis lattice parameters obtained were larger than the corresponding lattice parameter in bulk samples, even after low-temperature anneals in O2. The transition temperatures were found to decrease with the enlargement of the c-axis lattice parameter. A clear correlation between growth temperature and the value of the c-axis lattice parameter was observed. The c-axis lattice parameter and the x-ray linewidth of Bragg reflections with the G vector along the c-axis were also found to be correlated. This suggests a relationship between the c-axis lattice parameter and the structural coherence of the epitaxial films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103258
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructure of epitaxial YBa2Cu3O7−x thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2138-2140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the microstructure of epitaxial YBa2Cu3O7−x thin films on SrTiO3(100), LaGaO3(100), and LaAlO3 (100) with particular emphasis on how the final microstructure is developed. Cross-sectional transmission electron microscopy as well as plan-view transmission electron microscopy combined with sputter depth profiling were used to study the change in microstructure with the increase in film thickness. For a thin film or near the substrate/film interface of a thick film, the YBa2Cu3O7−x film is composed primarily of grains oriented with c axis normal to the substrate surface and a small volume fraction of grains with c axis parallel to the substrate surface. As the film grows thicker, the c-axis parallel grains increase in size and grow over the top of the c-axis normal grains. The volume fraction of c-axis parallel grains increases rapidly as the film thickness increases and eventually the entire film surface is covered by c-axis parallel grains. However, the number density of the c-axis parallel grains remains constant throughout the whole film thickness. A growth model is proposed to explain the observed microstructure. Based on this model, a computer simulation is carried out. The simulated microstructure agrees well with the experimental result.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103237
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  • 5
    Electronic Resource
    Electronic Resource
    Electron tunneling time measured by photoluminescence excitation correlation spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 552-554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 A(ring) has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 A(ring) (≈12 ps) to 34 A(ring)(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100928
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  • 6
    Electronic Resource
    Electronic Resource
    Radiation-induced interface phenomena: Decoration of high-energy density ion tracks (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1513-1515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of 20 MeV Cl4+ ions incident on Au-SiO2 and Ag-SiO2 interfaces was investigated using high-resolution transmission electron microscopy. Cross-sectional micrographs expose beam-induced gold interfacial transport and migration into the SiO2. No such migration was observed for silver films. The relevance of this phenomenon to the adhesion improvement found at corresponding irradiation doses is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101383
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  • 7
    Electronic Resource
    Electronic Resource
    Nucleation and growth of YBaCuO on SrTiO3 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1871-1873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied transmission electron microscopy (TEM) cross sections and plan views of YBaCuO films on SrTiO3 single-crystal substrates at various stages of post-deposition anneal. These TEM studies reveal in extraordinary detail the process of nucleation of epitaxial crystal structure characteristic of the films. In partially annealed samples sputtered from separate Cu, Y, and BaF2 sources, we see the 2-4-8 phase nucleates at the substrate interface, with the c axis parallel to the [001] substrate direction (surface normal). Upon further annealing, the 1-2-3 phase nucleates on this layer with the c axis parallel to each of the [100], [010], and [001] substrate directions. Rapid growth in the a- and b-axis directions results in an uneven "basket weave'' surface texture. This information is crucial to the successful control and optimization of crystal orientation and surface morphology of superconducting thin films necessary for the application of this material to multilayer structures for electronic devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100484
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  • 8
    Electronic Resource
    Electronic Resource
    Infrared response from metallic particles embedded in a single-crystal Si matrix: The layered internal photoemission sensor (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1419-1421 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared radiation at wavelengths of 1–2 μm has been detected in a new device labeled the layered internal photoemission sensor. The device structure, which is grown by molecular beam epitaxy, incorporates epitaxial CoSi2 particles with dimensions of 10–50 nm. Radiation absorbed by these particles photoexcites carriers into a surrounding single-crystal silicon matrix. A peak quantum efficiency of 1.3% is measured, which is approximately six times higher than in planar CoSi2 Schottky diodes with 5 nm silicide thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103453
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  • 9
    Electronic Resource
    Electronic Resource
    Indium oxide diffusion barriers for Al/Si metallizations (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2644-2646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in 〈Si〉/In2O3/Al and 〈Si〉/TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross-sectional Si/In2O3/Al specimens, and electrical measurements on shallow n+-p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100-nm-thick In2O3 layers prevent the intermixing between Al and Si in 〈Si〉/In2O3/Al contacts up to 650 °C for 30 min, which makes this material one of the best thin-film diffusion barriers on record between Al and Si. (The Si-Al eutectic temperature is 577 °C, Al melts at 660 °C.) When a contacting layer of titanium silicide is incorporated to form a 〈Si〉/TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600 °C for 30 min heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100541
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 247-249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by a Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102383
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