ISSN:
1432-0630
Keywords:
81.15.-z
;
81.60.Bb
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Molybdenum oxide (Mo1−xOx) films were prepared by reactive rf sputtering of a Mo target in O2/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage of oxygen (x) in the Mo1−xOx films decreases with sputtering power and increases with the partial pressure of oxygen. Mo1−xOx films that exhibit metallic conductivities can be obtained over a wide range of sputtering conditions. The intrinsic film stress of conducting Mo1−xOx is compressive. Such M1−xOx films were shown by backscattering spectrometry to be excellent diffusion barriers between Al and Si up to 600 °C annealing for 30 min.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617930
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