ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
High voltage 4H-SiC Schottky diodes with single-zone junction termination extension(JTE) have been fabricated and characterised. Commercial 4H-SiC epitaxial wafers with 10, 20 and45 +m thick n layers (with donor concentrations of 3×1015, 8×1014 and 8×1014 cm-3, respectively)were used. Boron implants annealed under argon flow at 1500°C for 30 minutes, without anyadditional protection of the SiC surface, were used to form JTE’s. After annealing, the total chargein the JTE was tuned by reactive ion etching. Diodes with molybdenum Schottky contacts exhibitedmaximum reverse voltages of 1.45, 3.3 and 6.7 kV, representing more than 80% of the idealavalanche breakdown voltages and corresponding to a maximum parallel-plane electric field of1.8 MV/cm. Diodes with a contact size of 1×1 mm were formed on 10 +m thick layers (productiongrade) using the same device processing. Characterisation of the diodes across a quarter of a 2-inchwafer gave an average value of 1.21 eV for barrier heights and 1.18 for ideality factors. The diodesexhibited blocking voltages (defined as the maximum voltage at which reverse current does notexceed 0.1 mA) higher than 1 kV with a yield of 21 %
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.873.pdf
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