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  • 1
    Electronic Resource
    Electronic Resource
    Fabrication and characterization of diamond film thermistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3799-3803 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Diamond film thermistors were fabricated from polycrystalline diamond films grown on sintered Si3N4 by microwave plasma chemical vapor deposition. An undoped diamond layer and a zigzag or rectangular pattern of B-doped semiconducting diamond were successively deposited by a selected-area deposition technique. For ohmic electrodes, a Ti/Au bilayer was used. The resistance-temperature characteristics were measured from room temperature to 300 °C. It was found that the temperature coefficient of a diamond film thermistor with a B-doped diamond layer grown using 0.1 ppm B2H6 as dopant gas was higher than those of platinum resistive temperature detectors and SiC film thermistors. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144510
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Metal/intrinsic semiconductor/semiconductor field effect transistor fabricated from polycrystalline diamond films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8142-8145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal/intrinsic semiconductor/semiconductor field effect transistor (MiSFET) was successfully fabricated for the first time using polycrystalline diamond films grown by microwave plasma chemical vapor deposition. The gate length, the gate width, and the source-to-drain spacing were 10 μm, 1 mm, and 30 μm, respectively. The FET characteristics were measured with the source electrode grounded. For the range of drain voltage VD, −10 V ≤ VD≤0, the fabricated MiSFET exhibited a reduction of the drain current as the gate bias VG was increased from 0 to 6 V at room temperature. The drain current modulation was considerably enhanced at 77 K. The transconductance at VD=−10 V and VG=2 V was 5 μS/mm. For VD〈−10 V and VG(approximately-greater-than)6 V, or at temperatures above room temperature to 398 K, the drain current modulation decreased significantly due to increased gate leakage current. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358465
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  • 3
    Electronic Resource
    Electronic Resource
    Selected-area deposition of diamond films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7329-7336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selected-area deposition of diamond film has been accomplished on Si substrates prepared by two different methods: reactive-ion etching (RIE) and amorphous-Si masking (ASM). In the RIE method, a Si substrate polished by a diamond paste was patterned with a photoresist mask, and the unprotected areas were etched by RIE, followed by a complete removal of the photoresist films. The diamond deposition was done by electron-assisted chemical-vapor deposition (CVD), and diamond films grew only in the areas once covered with the photoresist films and not etched by RIE. In the ASM method, a polished Si substrate was also photolithographically masked with photoresist, followed by a uniform deposition of a hydrogenated amorphous silicon (a-Si:H) film. The photoresist film was then lifted off together with the overlay of deposited a-Si:H, leaving the polished Si surface patterned with an a-Si:H mask. In this case, the diamond deposition was done by microwave plasma CVD, and diamond films grew only in the areas not covered with a-Si:H. In both cases, well-defined diamond patterns with line/space dimensions of a few micrometers were formed on the substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344519
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  • 4
    Electronic Resource
    Electronic Resource
    A case of partial trisomy 2p (region 2p21→2pter) derived from a maternal t(2;15)(p21;q26) (1980)
    Springer
    Journal of human genetics 25 (1980), S. 47-53 
    Details
    ISSN: 1435-232X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary A further case of partial trisomy 2p inherited from a maternal balanced translocation with a karyotype of 46,XX,t(2;15)(p21;q26) is reported. The female patient had an unbalanced karyotype with duplication of the distal part of the short arm of chromosome 2 (region 2p21→2pter). On the basis of the cytogenetic finding, clinical features of this patient were compared with those of the reported two cases with the similar duplication of region 2p21→2pter. The clinical features common to the three cases were hypertelorism, triangular face, large abnormal ears, congenital heart defect and long fingers, but microcephaly, prominent nasal bridge and long toes noted in the reported cases were replaced with hydrocephalus, wide, flat nasal bridge and short toes in the present case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01876545
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