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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial InAs-coupled superconducting junctions (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 6121-6125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial n-type InAs-coupled superconducting junctions are investigated. The n-type channel layer on a p-type substrate has nearly the same mobility as bulk crystal and the layer can be isolated electrically from the substrate by the built-in potential at the p-n interface. As a result, the critical current-normal resistance (IC RN ) product of the homoepitaxial n-type InAs-coupled junction is at least 30 times better than those of the bulk n-type ones. The coherence length ξN is calculated using the experimentally obtained carrier concentration, mobility, and effective mass. Temperature dependence of IC agrees with calculations based on the proximity effect theory which can be applied to the intermediate regime between the clean and dirty limits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343594
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  • 2
    Electronic Resource
    Electronic Resource
    Spin-interference device (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 695-697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a spin-interference device which works even without any ferromagnetic electrodes and any external magnetic field. The interference can be expected in the Aharonov–Bohm (AB) ring with a uniform spin-orbit interaction, which causes the phase difference between the spin wave functions traveling in the clockwise and anticlockwise direction. The gate electrode, which covers the whole area of the AB ring, can control the spin-orbit interaction, and therefore, the interference. A large conductance modulation effect can be expected due to the spin interference. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124485
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  • 3
    Electronic Resource
    Electronic Resource
    A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 418-420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about −1 V; this provides voltage gain over 1 for a JOFET. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116704
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  • 4
    Electronic Resource
    Electronic Resource
    Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure by inserting a strained InAs quantum well (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mobility of two-dimensional electrons in an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure improved by inserting an InAs quantum well into the InGaAs channel. This letter addresses the main cause of this mobility improvement. By optimizing the thickness of the InAs quantum well, its distance from the underlying InAlAs spacer layer, and the InAlAs spacer-layer thickness, maximum mobilities of 16 500 cm2/V s at 300 K and 155 000 cm2/V s at 10 K are attained. The improvement in mobility is attributed to a decrease in scattering caused by ionized impurities, interface-roughness, and trap impurities. This decrease is a result of the superior confinement of two-dimensional electron gas in the InAs quantum well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112089
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  • 5
    Electronic Resource
    Electronic Resource
    Single-crystal growth of Nb films onto molecular beam epitaxy grown (001)InAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2037-2039 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Nb films are grown by electron beam evaporation in an ultrahigh vacuum system on molecular beam epitaxy grown (001)InAs epitaxial layers. The Nb on InAs grows as a single-crystalline deposit at a substrate temperature of 200 °C. The orientation relation is (001)Nb//(001)InAs with [110]Nb//[110]InAs, which is different from Nb growth on GaAs. The interface between Nb and InAs features a crystal-disordered layer with a thickness of 1–2 nm, which provides relaxation from lattice mismatch. Critical current measurement of Nb/InAs/Nb junctions shows that the crystal-disordered layer does not affect the superconducting characteristics of the junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106124
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  • 6
    Electronic Resource
    Electronic Resource
    Elastic scattering and the current-voltage characteristics of superconducting Nb-InAs-Nb junctions (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2555-2557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting niobium contacts are attached to a 0.8-μm-long epitaxially grown InAs channel sandwiched between insulating InGaAs layers. The current-voltage characteristics show nonlinearities at submultiples of the superconducting energy gap indicative of multiple-Andreev reflections. We demonstrate that an increase in the elastic scattering rate in the InAs channel, caused by Ar-ion etching, diminishes the order of Andreev reflections and explains the overall shape of the current-voltage characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110431
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    Paper (German National Licenses)
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