ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100822
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