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  • 1
    Electronic Resource
    Electronic Resource
    Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3950-3952 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase separation was found to occur in In0.33Ga0.67N/GaN multiple-quantum-well structures after annealing at 975 °C in a hydrostatic pressure of 5 kbar N2 for 4 h. X-ray diffraction (XRD) spectra of the as-grown samples showed superlattice peaks that were replaced by a broad, single-phase peak after annealing. Transmission electron microscopy (TEM) images of the annealed samples show In-rich precipitates and voids that are found only within the quantum-well region. Both TEM and XRD measurements indicated that the formation of voids and second phases were suppressed after annealing in a hydrostatic pressure of 15 kbar. In addition, optical absorption measurements on these samples showed no indication of a peak at 2.65 eV that was observed in previous annealing studies. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125504
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  • 2
    Electronic Resource
    Electronic Resource
    Early stages of growth of GaAs on Si observed by scanning tunneling microscopy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2419-2421 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a system coupling molecular beam deposition, scanning tunneling microscopy, and Auger spectroscopy in a connected ultrahigh-vacuum environment, we have observed the initial stages of GaAs growth on vicinal Si(100), including As termination, ordered Ga overlayers, and subsequent competition between two- and three-dimensional structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103864
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of microstructure on the carrier concentration of Mg-doped GaN films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2734-2736 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature Hall effect measurements of (0001) Mg-doped GaN films grown on sapphire substrates by metalorganic chemical vapor deposition show a reduction in hole concentration for Mg concentrations greater than 1020 cm−3. A combination of secondary ion mass spectrometry and transmission electron microscopy indicates a steadily increasing Mg incorporation during growth and the formation of inversion domains at these high concentrations. We discuss mechanisms that could give rise to a reduction of the hole concentration at high Mg doping levels. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413222
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  • 4
    Electronic Resource
    Electronic Resource
    Faceted inversion domain boundary in GaN films doped with Mg (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2479-2481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxial GaN films, doped with Mg, were grown by rf-plasma molecular-beam epitaxy on Ga-polarity (0001) templates. Convergent-beam electron diffraction analysis establishes that the film polarity changes from [0001] to [0001(underbar)] when the Mg flux during growth is approximately 1 ML/s. Secondary ion mass spectrometry indicates a doping concentration of ∼1020 cm−3 in the film where the inversion occurs, and a reduced Mg incorporation in the [0001(underbar)] material. Transmission electron microscopy shows that the inversion domain boundary is faceted predominantly along the {0001} and {h,h,−2h,l} planes, with l/h approximately equal to 3. Using first-principles total energy calculations, we show that the {h,h,−2h,l} segments of the boundary are stabilized by the incorporation of Mg in threefold coordinated lattice sites. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318731
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  • 5
    Electronic Resource
    Electronic Resource
    Energetics of AlN thin films on the Al2O3(0001) surface (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 936-938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an ab initio study of the energetics and atomic structure of films consisting of approximately 1 bilayer of AlN on the c-plane sapphire surface. We show that these films are unstable with respect to three-dimensional islands, and we attribute this instability to both strain and chemical mismatch between the oxide and the nitride. The relative stability of the AlN films depends on the chemical potentials of Al and N. Films having (0001) polarity are expected to form under Al-rich conditions. Films with (0001¯) polarity appear to form only for undersaturation conditions of bulk AlN in the initial stages of growth. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122044
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  • 6
    Electronic Resource
    Electronic Resource
    Surface energetics, pit formation, and chemical ordering in InGaN alloys (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2319-2321 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present first-principle calculations of the structure and energetics of the GaN(101(underbar)1) surface, and present models for the reconstructions. A strong preference for In surface segregation and occupation of specific surface sites is demonstrated. We argue that inverted pyramid defect formation is enhanced by segregation of In on (101(underbar)1) facets. We propose that the chemical ordering recently observed in InGaN alloys is driven by the preference for In incorporation at the sites of reduced N coordination present at step edges during growth on the (0001) and (0001(underbar)) surfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123837
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  • 7
    Electronic Resource
    Electronic Resource
    Inversion domains in GaN grown on sapphire (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2394-2396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar defects observed in GaN films grown on (0001) sapphire have been identified as inversion domain boundaries (IDBs) by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam electron diffraction techniques. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all were found to contain IDBs. The IDBs in the MBE and HVPE films extended from the interface to the film surface and formed columnar domains that ranged in width from 3 to 20 nm in the MBE films and up to 100 nm in the HVPE films. For the films investigated, the MBE films had the highest density, and the MOCVD films had the lowest density of IDBs. The nucleation of inversion domains (IDs) may result from step-related inhomogeneities of the GaN/sapphire interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117648
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