ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS)mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Siand C faces. The Si-Ge melts, which Si content was varied from 25 to 50 at%, were fed by 3 sccmof propane. The growth temperature was varied from 1200 to 1600°C. It was found that singledomain3C-SiC layers can be obtained on 6H-SiC off and on-axis and 4H-SiC on-axis, while theother types of substrate gave twinned 3C-SiC material. As a general rule, one has to increasetemperature when decreasing the Si content of the melt in order to avoid DPB formation. It was alsofound that twinned 3C-SiC layers form at low temperature while homoepitaxy is achieved at hightemperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.187.pdf
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