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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5006-5013 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation damage induced by 2 MeV alpha particles in polycrystalline diamond films has been studied as a function of the irradiation dose D (1012≤D≤1017 cm−2). The films were characterized using Raman/photoluminescence spectroscopy and I(V,T) measurements. The results can be summarized as follows. In undoped samples the H3 luminescent center (N–V–N) is observed for D≥1014 cm−2. The Raman diamond peak is broadened and shifted to lower frequencies for D(approximately-greater-than)1015 cm−2. No new graphitic component is detected after irradiation. On the contrary graphitic sp2 defects are annealed by irradiation. For D=3×1016 cm−2 new Raman defect peaks are detected at 1496 and 1635 cm−1. I(V,T) characteristics remain unaffected for D≤1016 cm−2. An increase in the conductivity is observed for D=3×1016 cm−2. At this dose we observe an activation energy of 0.4 eV and thermally stimulated currents related to defect levels at about 0.3 eV. A boron-doped sample (100 Ω cm) has been irradiated at 1017 cm−2 for comparison. After irradiation the conductivity of this sample is reduced and the activation energy of the conductivity is also reduced. Less damage is detected by Raman spectroscopy in the B-doped material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1492-1494 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deeply buried boron doped layers are realized in single crystal diamond using MeV ion implantation. Contact to the buried layers is accomplished using pulsed focused laser irradiation which is selectively absorbed in the implanted layer to form a graphite column up to the surface. The contacts are ohmic over a wide range of applied voltage. Implantation induced defects that are responsible for compensation of the acceptors are identified. It is found that removal of these defects requires annealing temperatures of about 1450 °C, but once these defects are removed the buried B doped layer displays excellent activation of the acceptors with an activation energy of 0.372 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3007-3018 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report synthesis of diamond nanocrystals directly from carbon atoms embedded into fused silica by ion implantation followed by thermal annealing. The production of the diamond nanocrystals and other carbon phases is investigated as a function of ion dose, annealing time, and annealing environment. We observe that the diamond nanocrystals are formed only when the samples are annealed in forming gas (4% H in Ar). Transmission electron microscopy studies show that the nanocrystals range in size from 5 to 40 nm, depending on dose, and are embedded at a depth of only 140 nm below the implanted surface, whereas the original implantation depth was 1450 nm. The bonding in these nanocrystals depends strongly on cluster size, with the smaller clusters predominantly aggregating into cubic diamond structure. The larger clusters, on the other hand, consist of other forms of carbon such as i-carbon and n-diamond and tend to be more defective. This leads to a model for the formation of these clusters which is based on the size dependent stability of the hydrogen-terminated diamond phase compared to other forms of carbon. Additional studies using visible and ultraviolet Raman Spectroscopy, optical absorption, and electron energy loss spectroscopy reveal that most samples contain a mixture of sp2 and sp3 hybridized carbon phases. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2248-2250 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarized micro-Raman spectra of chemically vapor deposited diamond films are presented. It is shown that important parameters often extracted from the Raman spectra such as the ratio of the diamond to nondiamond component of the films and the estimation of the level of residual stress depend on the orientation of the diamond crystallites with respect to the polarization of the incident laser beam. The dependence originates from the fact that the Raman scattering from the nondiamond components in the films is almost completely depolarized while the scattering from the diamond components is strongly polarized. The results demonstrate the importance of taking polarization into account when attempting to use Raman spectroscopy in even a semiquantitative fashion for the assessment of the purity, perfection, and stress in chemical vapor deposition diamond films. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3125-3127 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micro-Raman scattering from single crystal GaN films, both free-standing and attached to Al2O3 substrates, was performed over the temperature range from 78 to 800 K. These measurements reveal that the Raman phonon frequency decreases and the linewidth broadens with increasing temperature. This temperature dependence is well described by an empirical relationship which has proved to be effective for other semiconductors. The experiments also demonstrate that the strain from Al2O3 substrates compresses the epitaxial GaN in the c-axis direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Applied Organometallic Chemistry 4 (1990), S. 569-580 
    ISSN: 0268-2605
    Keywords: Chromium ; molybdenum ; tungsten ; mesitylene metal tricarbonyls ; infrared ; Raman ; spectra ; intensities ; polarity ; polarizability ; arene-metal bonding ; Chemistry ; Organic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Infrared and Raman spectra of mesitylene complexes of chromium, molybdenum and tungsten tricarbonyls have been studied. Bands have been assigned and intesities calculated for a number of important modes. The intensities are related to the polarities and polarizabilities of individual bonds within the molecules. Variations of bond properties with change of metal M in the (η6-mesitylene)M(CO)3 complexes have been examined. The results are interpreted in terms of the relative importance of π-donation from the arene to the metal and of δ-backbonding. A molecular orbital scheme is proposed which accounts for the changes observed in the degree of π-and δ-bonding within the group of complexes studied.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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