Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 446-447 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time the observation of a sharp peak in the broad luminescence spectrum of hydrogenated amorphous silicon (a-Si:H) has been achieved, using erbium as a dopant. Thus, a method of investigating the structure of solid-state systems which previously has only been used with crystals can now be applied to a-Si:H. The idea is to measure the splitting of the luminescence of "spy'' atoms, or ions, by the crystal field of the host substance subject of investigation into which they are incorporated. Finding a suitable substance for use with a-Si:H has proven to be a difficult task, which we now have accomplished as a first step in establishing this method for the investigation of amorphous substances.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 83 (1991), S. 57-70 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract After a brief review of the relevant He II-flow equations, we report results of our investigations of He II counterflow in the presence of net liquid flow, using a narrow-plane parallel slit. Measurements of the liquid temperature inside the flow channel indicate that with counterflow, there is always some supercomponent vorticity present at least along a part of the channel. With higher velocities, a transition from laminar to turbulent normal-component flow was observed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 40 (1980), S. 207-222 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: The results of a systematic study of helium thin-film adsorption are presented. Measurements are reported, obtained with a 24-MHz crystal adsorptometer, on the adsorbed mass per unit area as a function of the three independent variables temperature, concentration, and pressure of the gas of 3He-4He atoms generating the adsorbed film. The investigations span concentrations from zero to unity, all pressures up to the dew point for each mixture, and temperatures from 1.3 to 2.1 K. From the experimental results we display the detailed form of the van der Waals attractive potential holding the helium atoms to the surface. The expected dependence on the cube of the distance from the substrate is confirmed over the range of distances explored. The strength of the van der Waals potential is measured and reported. This attractive potential is demonstrated to be of the same form and of the same strength both for the 3He atoms and for the 4He atoms in the mixture at all concentrations. We further deduce, directly from our measurements, the detailed relationship between Σ, the mass per unit area of film absorbed, and d, the thickness of the film.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...