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  • 1
    Electronic Resource
    Electronic Resource
    Rate constants for the etching of intrinsic and doped polycrystalline silicon by bromine atoms (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2635-2638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rate constants for the reaction of bromine atoms with intrinsic and heavily doped n+-type polycrystalline silicon, as well as their temperature dependencies, are reported for the first time. The rate constant for intrinsic silicon is given as k=(4±2)×107 nm min−1 Torr−1e−(62±2kJ/mol)/RT and for n+-type silicon with a phosphorus number density of 5×1018 cm−3, k=(1±1)×1011 nm min−1 Torr−1e−(62±2kJ/mol)/RT. Although the etch rates for the n+-type silicon are 2–3 orders of magnitude larger than for intrinsic silicon at the same temperature and atom concentration, the difference in the two rate constants is due to a change in the pre-exponential Arrhenius factor and not in the activation energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348656
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  • 2
    Electronic Resource
    Electronic Resource
    Rate constants for the reaction of Cl atoms with intrinsic and n+-doped polycrystalline silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 548-549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of Cl atoms with intrinsic and n+-doped polycrystalline silicon has been studied at a Cl partial pressure of 0.17 Torr and in the temperature ranges from 150 to 290 °C and 25 to 90 °C for the two materials, respectively. The reaction with n+-doped silicon was observed to proceed 90 times faster than with intrinsic silicon at any given temperature, i.e. within experimental error the difference in the rate constants for the two materials was found to be entirely attributable to a change in the pre-exponential factor, with the activation energy remaining unchanged. The rate constant for the reaction is given by (9±2)×105 nm min−1 Torr−1 exp−28.2±1.2 kJ/mol)/RT for the intrinsic material and (7±3)×107 nm min−1 Torr−1 exp−(27.8±1.5 kJ/mol)/RT for the phosphorus doped material with a dopant density of 5×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347653
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetic study of atomic hydrogen etching of GaAs (100) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2155-2159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semi-insulating GaAs (100) was exposed to hydrogen atoms that were produced in a remote microwave plasma. The flux of hydrogen atoms was determined by isothermal calorimetry. Hydrogen atom partial pressures between 3 and 51 mTorr were found to etch GaAs continuously at rates that ranged from 3 to 40 nm/min at temperatures above 200 °C. The rate coefficients could be fitted to the Arrhenius equation, k=105.2±0.6 nm min−1 Torr−1 e−0.25±0.05 eV/kT, between 200 and 360 °C. The surfaces etched crystallographically and were found to become arsenic deficient. The possible influence of hydrogen atom absorption by GaAs is considered. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358792
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  • 4
    Electronic Resource
    Electronic Resource
    The etching of doped polycrystalline silicon by molecular chlorine (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6510-6514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etching reaction of molecular chlorine with phosphorus-doped polycrystalline silicon was measured as a function of dopant concentration between 300 and 500 °C. The effective activation energy of the gasification reaction is 13.4±1 kcal/molec and does not change with doping level within experimental uncertainty. However, the isothermal reaction rate at constant reactant flux increases sharply with doping level, and the preexponential factor rises from 4×10−12 to 1×10−10 (A(ring) cm3/molec min K1/2) as the phosphorus content is increased from 3.3×1018 to 1.6×1020 atoms/cm3. This rise in the preexponential factor is consistent with the charge-transfer model, in which doping makes Si-Cl bonding more ionic and increases the number of effective adsorption sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342070
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  • 5
    Electronic Resource
    Electronic Resource
    Quenching of oxygen(1.DELTA.8) by amines (1970)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 92 (1970), S. 5034-5036 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00720a005
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  • 6
    Electronic Resource
    Electronic Resource
    Doping and crystallographic effects in Cl-atom etching of silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3115-3120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Absolute rates for the intrinsic reaction between Cl atoms and surfaces of P-doped polycrystalline silicon, P-doped Si(100) and As, Sb-doped Si(111) substrates were measured for the first time as a function of dopant concentration (Ne) and substrate temperature in a downstream reaction system. This study clearly shows that when there is no ion bombardment, increasing Ne increases the Si-Cl reaction rate even when silicon is lightly doped (∼1015 cm−3), in contrast to in-discharge studies. Moreover, results showed that crystal orientation influences the Cl-Si reaction more than Ne, for Ne〈1020 cm−3. The data are fitted to a modified Arrhenius expression, R=νNγenClT1/2e−E/kT, with R the etch rate and nCl the gas phase Cl concentration. The calculated values of the activation energy E are 4.1–4.7 kcal/mole for all doping levels and crystallographic orientations. Therefore, the doping effect is manifested solely in the preexponential (νNγe) of the Arrhenius expression, and the data qualitatively agree with a charge-transfer mechanism which facilitates chemisorption of chlorine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345388
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  • 7
    Electronic Resource
    Electronic Resource
    Rate constants for the etching of gallium arsenide by atomic chlorine (1991)
    Springer
    Plasma chemistry and plasma processing 11 (1991), S. 311-321 
    Details
    ISSN: 1572-8986
    Keywords: Plasma etching ; rate constants ; experimental
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Known chlorine atom concentrations were prepared in a discharge flow system and used to etch the (100) face of a gallium arsenide single crystal. The etch rate was monitored by mass spectrometry, laser interferometry, and surface proftlometry. In the temperature range from 90 to 160°C the reaction can be described by the rate law $$Etch rate = kP_{Cl} $$ where $$k = 9 \times 10^{(6 \pm 0.5)} \mu m min^{ - 1} Torr^{ - 1} e^{ - 9 \pm 1)kcal/RT} $$
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447249
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  • 8
    Electronic Resource
    Electronic Resource
    Etching of GaAs (100) with gaseous H/CH3 mixturesThis article is contributed to the special edition in honor of Dr. Robert A. Back. (1994)
    New York, NY : Wiley-Blackwell
    International Journal of Chemical Kinetics 26 (1994), S. 131-140 
    Details
    ISSN: 0538-8066
    Keywords: Chemistry ; Physical Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: GaAs (100) wafers were etched in mixtures of hydrogen atoms and methyl radicals. The atoms were formed in a remote hydrogen plasma, and a fraction of these were converted into methyl radicals by introducing methane into the flow system upstream from the semiconductor surface. The flux of hydrogen atoms into the reaction chamber was determined by isothermal calorimetry. The methyl radical flux passing over the substrate was then calculated using previously determined rate parameters for the reaction between atomic hydrogen and methane, and a simple modeling program. The GaAs etch rates were about an order of magnitude faster when methyl radicals were present in the hydrogen atom stream, and were found to follow a first-order dependence on the partial pressure of methyl radicals. Absolute rate constants were determined and an Arrhenius activation energy of 1.2 kcal mol-1 was calculated. The values of k and Ea are consistent with a diffusion-controlled process. SEM photographs of the surface revealed small crystallographic features that made the surface appear very rough. XPS analysis indicated that these surfaces were arsenic deficient. A mechanism is proposed for the etching of GaAs by a combination of methyl radicals and hydrogen atoms. © 1994 John Wiley & Sons, Inc.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/kin.550260113
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