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  • 1
    Electronic Resource
    Electronic Resource
    Dielectric function of epitaxial ZnSe films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3364-3366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine various ZnSe spectra to obtain that which best represents the dielectric response ε of ZnSe. The measured evolution of pseudodielectric function 〈ε〉 data with chemical etching shows that the natural overlayer on ZnSe can be modeled accurately only if we assume that it contains amorphous Se. Hence previous assumptions made in correcting 〈ε〉 mathematically are not correct, and data obtained on stripped samples yield the best representation of ε. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328098
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancing defect-related photoluminescence by hot implantation into SiO2 layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 961-963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible photoluminescence around an orange band of 580 nm wavelength are observed from 300 nm thin SiO2 layers implanted by Si or Ge ions at both substrate temperatures of 25 °C [room temperature (RT)] and 400 °C (hot). Si implantations at an energy of 30 keV were performed with doses of 5×1015, 3×1016, and 1×1017 cm−2 while Ge implantations were done at 100 keV with a dose of 5×1015 cm−2. Samples implanted at 400 °C always show much higher intensities of luminescence than those implanted at room temperature. Electron spin resonance signals of the hot-implanted samples indicate relatively smaller amounts of nonradiative defects than those of RT-implanted samples. It is concluded that the hot-implantation effectively enhances the intensity of defect-related photoluminescence by reducing the density of the nonradiative defects and introducing the radiative defects, which contribute to the luminescence in SiO2 layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123423
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  • 3
    Electronic Resource
    Electronic Resource
    Metal-clad ridge waveguide structure InGaP/InGaAIP visible laser diodes (1995)
    Springer
    Optical and quantum electronics 27 (1995), S. 453-457 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract InGaP/InGaAIP visible-light laser diodes with a metal-clad ridge waveguide structure have been fabricated. Compressively strained SCH-MQW structures were grown by low-pressure MOCVD and the lasing wavelength was 690 nm. The threshold current was 28 mA at 25°C for a 400 μm cavity and 5 μm stripe width. CW operation was obtained as the cleaved device by employing thick gold layer as a heat spreader. The light-output power versus CW current was linear up to a maximum light output power of 38 mW. Stable operation of the fundamental transverse optical mode was maintained up to 30 mW. These results show that this metal-clad ridge waveguide structure provides sufficient current confinement even under high light output power operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00563583
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    Paper (German National Licenses)
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