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  • 1
    Electronic Resource
    Electronic Resource
    Anisotropic GaAs island phase grown on flat GaP: A Stranski–Krastanow-formed corrugated surface (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5726-5730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dense phase of GaAs wires forms a corrugated surface in the early stages of strained growth on GaP, assembling from elongated Stranski–Krastanow islands. For a series of samples, the evolution of shape and whisker periodicity has been followed as a function of deposition time. This has been done with the help of atomic-force microscopy together with autocorrelation measurements. Transmission electron microscopy measurements support the results. The lateral wire period and long shapes are not predicted by published models, though we conclude that the island orientation is picked out by facet energy inequivalencies. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359160
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    One-dimensional heterostructures in semiconductor nanowhiskers (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1058-1060 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447312
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  • 3
    Electronic Resource
    Electronic Resource
    Size-, shape-, and position-controlled GaAs nano-whiskers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3335-3337 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a technique for the synthesis of size-selected, GaAs, epitaxial nano-whiskers, grown on a crystalline substrate. As catalysts, we used size-selected gold aerosol particles, which enabled us to fully vary the surface coverage independently of the whisker diameter. The whiskers were rod shaped, with a uniform diameter between 10 and 50 nm, correlated to the size of the catalytic seed. Furthermore, by the use of nano-manipulation of the aerosol particles by means of atomic force microscopy, we can nucleate individual nano-whiskers in a controlled manner at specific positions on a substrate with accuracy on the nm level. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418446
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    Paper (German National Licenses)
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