ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Solution growth of 6H-SiC single crystal from Si-Ti-C ternary solution using theaccelerated crucible rotation technique (ACRT) was performed. The SiC growth rate exceeding 200μm/hr was achieved in several ACRT conditions. Such a high growth rate can be ascribed to theenhancement of the carbon transport from the graphite crucible to the growth interface due to theuse of the ACRT. The incorporation of inclusions of Si-Ti solvent in the grown SiC crystal was alsosignificantly suppressed by using the ACRT. The intensive convection near the growth interfaceinduced by the ACRT resulted in not only the marked increase of SiC growth rate but also thesuperior homogeneity in the surface morphology. It was concluded that faster stable growth couldbe accomplished in the SiC solution growth using the ACRT. The obtained SiC self-standing crystalexhibited homogeneous green colour without cracks and inclusions. We investigated the crystallinequality of the grown SiC crystal by means of X-ray diffraction. The, ω-scan rocking curves of(0006) reflection measured by X-ray diffraction provided the FWHM of 15-20 arc-second showingthe excellent crystallinity of the solution grown 6H-SiC single crystal
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.352.89.pdf
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