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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3462-3466 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents results of a microscopic photoluminescence (μ-PL) characterization of strained InAs0.5P0.5/InGaAsP multiquantum well (MQW) crystals with a series of well numbers (n=2–14). This method is useful in detecting misfit dislocations in the crystals, especially at the initial stage of their generation. The μ-PL intensity profile measurements of a laser diode (LD) cavity shows the intensity, being mainly influenced by the [01¯1]-directed misfit dislocations, is closely correlated to the threshold current of the LD. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1233-1237 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain-compensated InAsP/InGaAsP multi-quantum-wells (MQWs) grown by metalorganic molecular beam epitaxy (MOMBE) are characterized by conventional photoluminescence (PL), micro-PL, transmission electron microscopy, and x-ray diffraction measurements and applied to fabricate 1.3 μm wavelength laser diodes. These methods reveal that there is no deterioration in the optical properties or structure of strain-compensated MQWs having up to 25 wells, which means that the critical thickness of InAsP grown by MOMBE exceeds 1000 A(ring). The critical conditions of strain and thickness over which misfit dislocations are generated are determined for the MQWs. The MQW lasers with ten wells (Lz=55 A(ring)) have no misfit dislocations and have uniform threshold current densities of 0.9±0.1 kA/cm2. The maximum operating temperature Tmax of the lasers increases with increasing well number, the highest Tmax is 155 °C, which is obtained for MQW lasers with 15 wells. The lasers have no problems in terms of long-term reliability. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7024-7032 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier-induced optical nonlinearities in a GaAs quantum well wire structure are calculated within the framework of the effective mass approximation to clarify the nonlinear features of the one-dimensional (1D) system. In the calculation, the excitonic nonlinearity due to phase-space-filling, band-gap renormalization, and Coulomb screening effects is estimated on the basis of an effective 1D Coulomb potential. The 1D potential is derived, taking wire cross section into account. The change in the optical absorption for the band-to-band transition is evaluated, considering the band-filling effect and the changes in the Sommerfeld factor caused by the screening effects. The numerical results show that a blue shift of the excitonic absorption peak occurs at the absorption edge because the blue shift caused by the screening effect exceeds the red shift due to the band-gap shrinkage. In the spectral region above the band edge, where the band-to-band transition determines the optical properties, a decrease in optical absorption caused by band filling is compensated by increasing absorption, which stems from recovery of the Sommerfeld factor because of the Coulomb screening. The effect of the Coulomb interaction in a quantum wire laser is also discussed in relation to the gain spectrum in the high excitation regime. These results show that exact inclusion of the Coulomb interaction is crucial in estimating both linear and nonlinear optical properties in the 1D system.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Cost-effectiveness is essential in developing optical access network systems. To reduce system costs, both improved system and component technologies are required. Reducing the costs of optical devices and modules in an optical network unit is especially necessary. In this paper, the requirements for optical devices in optical access networks and modules are clarified. Moreover, we also review the recent progress in technologies for semiconductor optical devices and hybrid integration for low-cost optical modules in access networks.
    Type of Medium: Electronic Resource
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