ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ultraviolet-assisted low-temperature (550 °C) dry oxidation of Si0.8Ge0.2 strained layers on (100)Si has been studied. The oxidation rate of this material was found to be a factor of 2 greater than that of pure Si oxidation under identical irradiation conditions. Initially, the structure of the oxidized material consists of a SiO2 layer on top of a strained Si1−xGex layer with a Ge concentration significantly higher (x(approximately-greater-than)0.2) than the initial value. Increasing the oxidation time produces more SiO2 and a Si1−xGex layer further enriched with Ge. However, the oxidation rate is reduced and some of the Ge becomes trapped inside the growing SiO2 layer. For a prolonged irradiation time ((approximately-greater-than)5 h) SiGe oxidation still continues, unlike the case for pure Si, while the Ge trapped inside the SiO2 forms isolated microcrystalline regions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356320
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