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  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced etching of Si with chlorine (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2321-2326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo-induced dry etching of silicon with chlorine is studied by measuring mass spectra and time-of-flight (TOF) distributions of the particles desorbed from a chlorinated target during irradiation with 308- and 248-nm photons. The detected masses are Si, SiCl, SiCl2, and SiCl3. The measured TOF spectra can be fitted with Maxwell–Boltzmann-like distributions. The temperatures obtained by these fits depend on laser power and chlorine pressure. A higher laser power or gas pressure results in a higher temperature. Activation energies for desorbing Cl, SiCl, and SiCl2 are obtained. Possible mechanisms to explain the results will be discussed. Etching of rough silicon is much more efficient than the etching of polished silicon. The maximum etch rate obtained is 30 A(ring) per laser pulse. No difference is found between p- and n-type silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337142
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanisms of sputtering of Si in a Cl2 environment by ions with energies down to 75 eV (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 315-322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtering of Si in a Cl2 environment by Ar+ and Xe+ ions with energies down to 75 eV has been investigated. Mass spectra and time-of-flight distributions of the sputtered species have been measured. Under 75-eV Ar+-ion bombardment of the Si target, SiCl, SiCl2, SiCl3, and/or SiCl4 are sputtered. When increasing the ion energy the SiCl4 contribution decreases in comparison with SiCl. This is caused by the fact that the newly formed Si-Cl compounds are sputtered at a high rate compared to the rate of SiCl4 formation. Time-of-flight distributions indicate that under 100-eV Ar+-ion bombardment the species are not sputtered by a collision-cascade mechanism. The spectra can be fitted by Maxwell–Boltzmann distributions at a high (〉2000 K) temperature. Increasing the Ar+-ion energy to approximately 250 eV the time-of-flight spectra of the sputtered species change from Maxwell–Boltzmann-like into spectra as expected for a collision-cascade mechanism. For low-energy Xe+ ion bombardment the sputtered species also show Maxwell–Boltzmann time-of-flight distributions. The change from Maxwell–Boltzmann to collision-cascade distributions occurs at higher ion energies than for Ar+-ion bombardment. The results obtained for low ion energies are discussed in terms of evaporation from an ion-induced hot spot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341429
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-beam synthesis of a Si/β-FeSi2/Si heterostructure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1737-1739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam synthesis of a buried β-FeSi2 layer in Si is demonstrated. In the experiments Si(111) substrates have been implanted with 450-keV Fe+ ions. Samples have been analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Annealing at 900 °C of samples implanted with 6×1017 Fe+/cm2 causes formation of a buried layer consisting of grains with lateral dimensions of approximately 5 μm. The epitaxy of β-FeSi2 (110) and/or (101) planes parallel to the Si(111) substrate plane is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106235
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  • 4
    Electronic Resource
    Electronic Resource
    β-FeSi2 in (111)Si and in (001) Si formed by ion-beam synthesis (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4347-4353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam synthesis of β-FeSi2 is demonstrated both in (111) Si and (001) Si substrates by 450 keV Fe ion implantation at elevated temperatures using a dose of 6×1017 Fe/cm2 and subsequent annealing at 900 °C. The structure of the buried layers has been analyzed using Rutherford backscattering spectrometry, x-ray diffraction, and (cross-section) transmission electron microscopy. In (111) Si an epitaxial layer is formed consisting of grains with lateral dimensions of approximately 5 μm. Epitaxy of β-FeSi2 (110) and/or (101) planes parallel to the (111) Si substrate plane is observed. In (001) Si a layer is formed consisting of grains with lateral dimensions of typically 0.5 μm. Several grain orientations have been observed in this material, among others β-FeSi2 {320}, {103}, and {13,7,0} parallel to (001) Si. Selected (111) Si samples were investigated optically using spectroscopic ellipsometry, and near-infrared transmittance and reflectance spectroscopy. The results confirm that the β-FeSi2 layer has an optical band gap of 0.87 eV. The ellipsometry results indicate that the layers formed by ion-beam synthesis are more dense than those formed by surface growth techniques. Hall measurements show that the β-FeSi2 layers obtained are p type. Mobilities observed are 1–4 cm2/V s at room temperature and approximately 25 cm2/V s at liquid-nitrogen temperature. These results show that the electrical properties of ion-beam-synthesized β-FeSi2 is comparable with those of surface-grown material. The results confirm that optoelectronic applications of β-FeSi2 are limited.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354401
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    Paper (German National Licenses)
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