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  • 1
    Electronic Resource
    Electronic Resource
    Boron diffusion in silicon at high concentrations (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 116-120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles measured by secondary ion mass spectrometry have been used to compare boron diffusion from three different sources for temperatures ranging from 850 to 1050 °C. The sources included boron in situ doped and ion-implanted polycrystalline silicon as well as vapor using an evacuated capsule with highly doped powder. The junction depths and surface concentrations demonstrated little source dependence. Boltzmann–Matano analysis has been used to show that the concentration dependence of the diffusivity on source was minimal. We have clearly shown that conventional models of boron diffusion cannot fit the experimental data or the Boltzmann–Matano results, regardless of source. A new model has been used to describe the boron diffusion profiles more accurately.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340500
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Ti deposition temperature on TiSix resistivity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 877-878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Ti deposition temperature on the resistivity of as-deposited films are reported. The microstructure of as-deposited Ti films and its effect on electrical properties of TiSix formed during subsequent thermal annealing are investigated. Our work shows that the film deposition temperature not only affects the resistivity of as-deposited film but also influences the resistivity of TiSix formed during thermal anneals. The microstructure, specifically the grain size, of as-deposited Ti films appears to be the controlling factor in formation of TiSix phases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113417
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    Paper (German National Licenses)
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