Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 1548-1552
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A study has been made of the effect of hydrostatic pressure on an AlAs/GaAs/AlAs resonant tunneling diode in which the electrodes have been deliberately asymmetrically doped. In reverse bias, current is injected into the structure from a highly doped n+-GaAs electrode and in forward bias from a two-dimensional accumulation layer at the GaAs/AlAs interface. When large hydrostatic pressures are applied at 77 K, regions of negative differential resistance are induced in both bias directions. Current maxima with peak-to-valley ratios as large as 4 have been measured at 8 kbar. The intrinsic asymmetry of the structure aids in the identification of the origins of these features in terms of the X-point conduction-band minima of the device.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349571
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