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  • 1
    Electronic Resource
    Electronic Resource
    Diffusion and relaxation of excess carriers in InGaN quantum wells in localized versus extended states (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4697-4699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate diffusivity of excess carriers in InGaN multiple quantum wells by near-field optical imaging of photoluminescence profiles created with spatially inhomogeneous photoexcitation, complemented by spatially integrated time-resolved measurements. Nominally similar samples display a wide range of behavior in terms of the impact of localized states under moderate (n∼5×1017 cm−3) electron-hole (e-h) injection. By contrast, in the high density regime where present laser diodes operate (n∼1019 cm−3), radiative recombination is dominated by electronic action within the extended states.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371423
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A dual-wavelength indium gallium nitride quantum well light emitting diode (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2532-2534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p++/n++ InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410345
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  • 3
    Electronic Resource
    Electronic Resource
    A vertical cavity light emitting InGaN quantum well heterostructure (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3441-3443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exceeding 600 in initial experiments, suggesting that the approach can be useful for blue and near ultraviolet resonant cavity light emitting diodes and vertical cavity lasers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124121
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    Paper (German National Licenses)
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