Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 8133-8138
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The transient diffusion behavior of boron during rapid thermal annealing is simulated by adapting a recently developed pair diffusion model. Boron is assumed to reside on interstitial sites after ion implantation, forming boron-interstitial pairs (BI). Decay into substitutional boron (B) and interstitials (I) starts, as the temperature rises, due to the reaction BI(arrow-right-and-left)B+I. Implantation damage has been taken into account. The model accounts for the temperature dependence of the transient diffusion effect. To reduce the problems in determining the parameters of the diffusion model and to account for equilibrium diffusion an equation is derived. This equation can be used to reduce the number of unknown parameters and to assure diffusion under equilibrium conditions to be consistent with literature values at the same time. The effectiveness is demonstrated for the simulation of the transient diffusion of boron during rapid thermal annealing.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347466
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