ISSN:
1063-7834
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A study of the electroluminescence of erbium-doped, amorphous hydrogenated silicon, a-Si:H 〈Er〉, is reported. It has been found that the electroluminescence intensity at the wavelength λ=1.54 µm corresponding to the 4 I 13/2→4 I 15/2 intra-4f shell transition in Er passes through a maximum near room temperature. The unusual temperature and field dependences of the electroluminescence indicate electric-field induced multi-phonon tunneling emission of electrons from deep centers. The electroluminescence of Er3+ ions is due to their becoming excited as conduction-band electrons are captured by neutral dangling bonds (D 0 centers), which form when erbium is incorporated into the amorphous matrix. This Auger process transforms the center from its neutral state, D 0, to a negatively charged state, D −, and the energy released in the capture is transferred by Coulomb interaction into the erbium-ion 4f shell. The steady-state current through the electroluminescent structure is supported by the reverse process of multi-phonon tunneling-electron emission from the D − center to the conduction band. The proposed theoretical model is in a good agreement with experimental data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1130752
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