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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4445-4447 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of magnetic hysteresis and giant magnetoimpedance (GMI) in amorphous glass-covered Co–Si–B and Co–Mn–Si–B wires is presented. The wires, about 10 μm in diameter, were obtained by a glass-coated melt spinning technique. Samples with positive magnetostriction (MS) have a rectangular bistable hysteresis loop. A smooth hysteresis loop is observed for wires with nearly zero MS. When the MS is negative, almost no hysteresis is observed. The GMI was measured in the frequency range between 20 Hz and 30 MHz. The shapes of the impedance versus field curves are qualitatively similar to each other for both positive and zero MS samples. The impedance is maximum at zero field, and decreases sharply in the range of 10–20 Oe. For the negative MS wires, when the driving current is small, the impedance is maximum at a finite external field. The position of the maximum approaches zero with increasing current. The contributions of the moment rotation and domain wall motion in the three cases are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5527-5529 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied anisotropic magnetoresistivity (AMR) and planar Hall effect of granular Ni-rich NiFe–SiO2 and Fe–SiO2 films for various metallic volume fraction. Planar Hall resistivity was found to be the same as the magnetoresistivity (MR) difference between the longitudinal and the transverse geometry. As metallic volume fraction decreases, we found that the MR evolves from the AMR domination in the metallic conduction region, through an intermediate conduction region with mixed AMR and negative MR behavior, to the isotropic negative MR in the tunneling conduction region. Plausible explanations to this complicated evolution are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6140-6142 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall effect in granular co-sputtered ferromagnetic metal–insulator films was found to increase dramatically as the magnetic volume fraction decreases toward the metal–insulator transition. The saturated Hall resistivity is up to 160 μΩ cm at T=5 K, that is almost four orders of magnitude greater than that in a pure magnetic metal sample. Close to the metal–insulator transition, both magnetoresistivity and the saturated Hall resistivity decrease with increasing temperature. Correlations of the Hall resistivity with resistivity and magnetoresistivity are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1584-1586 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the shape of distribution F(G) for the conductance G between a point on the surface of a metal–insulator nanocomposite film and the conducting substrate. Random resistor networks with both metallic and tunneling bonds included are used to model nanocomposite films. Our simulation results show explicitly that the shape of F(G) is determined mainly by the connectivity of metal particles and the maximum tunneling distance in the composite. By applying our results to the available experimental data on granular NiFe–SiO2, we find important implications for the understanding of microscopic conduction mechanisms near the metal–insulator transition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3497-3499 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied both the resistivity and the Hall resistivity of cosputtered granular Ni–SiO2 films with the metal volume fraction x in the range of 0.5–1.0. Near the metal-insulator transition, or x of about 0.53–0.61, the saturated value of the Hall resistivity was up to 2×10−4 Ω cm. This value is almost 4 orders of magnitude greater than that of pure nickel. Both the resistivity and the Hall resistivity varied weakly with temperature, throughout the range of 5–300 K. We suggest that the percolating ferromagnetic granular metal films can be an alternative candidate material for high sensitivity Hall sensors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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