Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 3497-3499
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We studied both the resistivity and the Hall resistivity of cosputtered granular Ni–SiO2 films with the metal volume fraction x in the range of 0.5–1.0. Near the metal-insulator transition, or x of about 0.53–0.61, the saturated value of the Hall resistivity was up to 2×10−4 Ω cm. This value is almost 4 orders of magnitude greater than that of pure nickel. Both the resistivity and the Hall resistivity varied weakly with temperature, throughout the range of 5–300 K. We suggest that the percolating ferromagnetic granular metal films can be an alternative candidate material for high sensitivity Hall sensors. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115259
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