ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We calculate an expression for the fine structure in the field fluctuation spectrum of a semiconductor laser in terms of accessible device parameters. We measure the spectrum of an InGaAsP DFB laser and determine the linewidth, relaxation resonance, and damping versus current. From the relation between damping and current, we determine the nonlinear gain coefficient.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101254
Permalink