Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of boron neutralization in silicon by atomic hydrogen (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6532-6534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of boron neutralization on the hydrogenation temperature was studied systematically in 2-Ω-cm, B-doped crystalline silicon. The maximum penetration depth of H increases with temperature. The migration of H has an activation energy of 0.39 eV. The B neutralization, measured as surface resistivity, reaches a maximum at 100 °C. The surface resistivity reverts to the bulk value above 160 °C. The bond breaking that reactivates the acceptors has an activation energy of 0.76 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346831
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Existence of a Pb1-like defect center in porous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1759-1763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed a detailed study of electron spin resonance (ESR) spectra of porous silicon (PS) samples at different stages of treatment and with different porosities. In addition to the commonly observed Pb0-like dangling bond, results of curve fitting to our ESR spectra show that a Pb1-like center, similar to the Pb1 center observed at the (100) crystalline-Si/SiO2 interface, appears in the PS nanostructure. The ratio of the number of Pb1-like centers to that of Pb0-like centers is related to the PS porosity. Remote hydrogen plasma processing of the annealed PS does not change the ratio significantly, although the total numbers of Pb0-like and Pb1-like centers are reduced and photoluminescence efficiency is improved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358433
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Deep levels and persistent photoconductivity in GaN thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1983-1985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent decay in GaN thin films was studied in the time span from a few seconds to several days. The persistent photoconductivity (PPC) behavior was observed not only in Mg-doped p-type GaN films but also in undoped n-type GaN films. The photoconductivity spectra and the photocurrent response time were measured using a weak probe light at several times after the samples had been kept in the dark. During the relaxation, the photocurrent due to the subband-gap probe light decreased more than the photocurrent due to the UV probe light. It is suggested that metastable centers at 1.1, 1.40, and 2.04 eV above the valence band edge are responsible for the PPC behavior in Mg-doped GaN, and that Ga vacancy is the candidate for PPC effect in n-type GaN. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118799
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electroluminescence from erbium and oxygen coimplanted GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2098-2100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature operation of erbium and oxygen coimplanted GaN m-i-n (metal–insulator–n-type) diodes is demonstrated. Erbium related electroluminescence at λ=1.54 μm was detected under reverse bias after a postimplant anneal at 800°C for 45 min in flowing NH3. The integrated light emission intensity showed a linear dependence on applied reverse drive current. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116892
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Critical comparison of light-induced changes in sub-band-gap absorption and photoconductivity in hydrogenated amorphous silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1247-1249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work compares changes in the density of states due to light-induced degradation estimated by photoconductivity with those measured by photothermal deflection spectroscopy (PDS) on a series of hydrogenated amorphous silicon (a-Si:H) films having different valence bandtail widths (E0 ). We find that the photoconductivity measurements indicate orders of magnitude larger defect density changes than do the PDS measurements as the valence bandtail becomes broader. This conflict is resolved by showing that this difference is due to changes in the recombination rate coefficient K with valence bandtail width. The absolute change in K increases exponentially with E0. However, the change in K relative to the K of the annealed state decreases with E0, explaining why poor material shows a smaller light-induced effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100729
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A windowless helium lamp is employed to assist chemical vapor deposition of hydrogenated amorphous silicon from disilane feedstock gas at a film growth rate greater than 200 A(ring)/min. Material properties in this preliminary study are comparable to the best hydrogenated amorphous silicon (a-Si:H) films produced by conventional bulk plasma CVD techniques. The amount of photoconductivity degradation under long-time illumination is more than plasma-deposited a-Si-H thin films. Photoconductivity as high as σp =4×10−4 (Ω cm)−1 has been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100007
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electric field and infrared-induced recovery of metastability in amorphous hydrogenated silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 998-1000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we investigate the difference between the bond breaking and the charge trapping model of the light-induced effect in amorphous hydrogenated silicon (a-Si:H). We also report the partial recovery from the light-induced effect in p-i-n solar cells by infrared illumination in the presence of an electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98788
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Raman spectroscopic investigation of superconducting YBa2Cu3O7−x, semiconducting YBa2Cu3O6+x, and possible impurity phases (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 242-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Raman spectroscopic investigation of specimens of superconducting YBa2Cu3O7−x and of the possible impurity phases YBa2Cu3O6+x (semiconductor), Y2BaCuO5, Y2Cu2O5, BaCuO2, CuO, Y2O3, and BaCO3 indicates that in the range 100–700 cm−1, there are six characteristic lines belonging to the superconductor. At 13 K, these lines are at 150, 338, 441, 507, 590, and 644 cm−1. Comparison of the Raman spectra of the superconductor and the semiconductor indicates a mode stiffening of the pair at 338 and 441 cm−1, but a mode softening of the pair at 507 and 590 cm−1. A factor group analysis leads to a tentative assignment of the Raman and infrared allowed modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99651
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    The effect of threading dislocations, Mg doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4588-4593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Presently, GaN-based photodiodes grown on sapphire substrates exhibit broad spectral cutoffs, poor visible rejection, and low quantum efficiencies when illuminated through a p-type contact/window layer. We, therefore, investigate the effect of threading dislocations, Mg doping, and etching on the photoconductivity spectra in GaN. Highly resistive bulk GaN:Mg nearly free of threading dislocations has more than 1000 times better visible rejection ratio compared to highly dislocated and comparably doped p-GaN thin films grown on sapphire substrates. However, the heavy Mg compensation in both the bulk and the epitaxial film causes a broad spectral cutoff. Unintentionally doped semi-insulating GaN with low dislocation density has a similar rejection ratio compared to bulk GaN:Mg, but much sharper spectral cutoff due to the absence of intentional doping. Furthermore, postgrowth processing steps such as etching and polishing significantly increase the surface recombination compared to the as-grown surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371407
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Mapping the quality of semiconductor wafers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 674-679 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new instrument has been developed to map the photovoltaic response of a semiconductor to very penetrating sub-band-gap radiation (for silicon, λ=1.3 μm). The minority carrier density being nearly uniform throughout the thickness of the crystal, the photovoltaic response is dominated by the carrier diffusion length and thus reflects the quality of the material. A computer-controlled scan of the semiconductor presents a map of the gross quality of the specimen. The actual probe is a small transparent electrode (water) illuminated by an optical fiber carrying 1.3-μm light from an LED.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138888
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...