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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1748-1750 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy (MBE) GaAs grown in the intermediate temperature range of about 400 °C may provide combination of low lifetime, high resistivity, and high mobility. We compare current conduction in unannealed and annealed material grown at 400 °C by fabricating photodetectors on substrates grown between temperature ranges of 250–500 °C. The unannealed version of the device grown at 400 °C shows substantial difference of conduction properties in dark and under light. It is shown that while at low biases the unannealed material may be semi-insulating, at high biases more current is conducted than in annealed material. We attribute this to the effect of intergap states on current conduction and suggest that defect state assisted tunneling is the dominant current transport mechanism in these ranges. Quenching of response by light suggests that occupancy of traps can eliminate their role in current conduction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1590-3478
    Keywords: Kearns-Sayre syndrome ; ophthalmoplegia plus ; ragged-red-fibers
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Sommario Viene riportato un caso di sindrome di Kearns-Sayre completa ad esordio precoce, associata a leucodistrofia cerebrale, cerebellare e calcificazioni dei nuclei della base.
    Notes: Abstract A case of a complete Kearns-Sayre syndrome, of early onset, associated with cerebral and cerebellar leukodystrophy and basal ganglia calcification is reported. The clinical, neurophysiological and morphological findings suggest multisystem involvement.
    Type of Medium: Electronic Resource
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