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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 101-102 (Jan. 2005), p. 123-130 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The phenomenon of low-temperature homogenization (LTH) during interdiffusion is studied under condition a t Dv £ 2 / 1 ) ( (Dv is the bulk diffusion coefficient, a is the lattice parameter) using nano-objects of binary Cu-Ni and Cr-Ni systems compacted from nano-powders and produced by mechanical alloying. Two stages of LTH were detected: at the first stage (t £ 103 s) the volume fraction of solution rapidly grows; at the second stage (t 〉 103 s) the volume fraction of solutions grows slowly with practically constant average solution concentration. The first stage of LTH correlates with active grain growth caused by small size (l) of structural element and nonequilibrium structure of nano-objects. Obtained results are analyzed theoretically in terms of interdiffusion along migrating GBs due to grain growth at the first stage and DIGM mechanism at the second stage. It is shown that the GB concentration distribution during interdiffusion along migrating GBs and the kinetics of LTH depend on a parameter l/l where 2 / 1 ) / ( b b V sD d l= is thecharacteristic diffusion length. The mechanisms and criteria of LTH are proposed
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 94 (June 2003), p. 25-34 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Interface science 6 (1998), S. 165-170 
    ISSN: 1573-2746
    Keywords: interface migration ; surface interdiffusion ; vicinal crystal surface ; solid solution ; layered growth
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It has been shown that interdiffusion along a free vicinal crystal surface can lead, at comparably low temperatures, to layered growth of solid solution over the surface without the involvement of bulk diffusion. The alloy concentration distribution along the surface, as well as the normal rate of solution growth has been calculated. The formation of a layer of the solid solution has been experimentally observed on a vicinal (111) surface of Ni single crystal as a result of surface interdiffusion between Ni and a thin film of Au deposited on a part of the Ni surface. The surface diffusion coefficients, as well as other parameters responsible for the exchange rate between the adatoms and kinks of elementary steps have been measured in the temperature range 550–700°C.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1573-2746
    Keywords: intermetallic growth ; interfacial reaction ; diffusion ; high hydrostatic pressure ; activation volume
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of growth of the Cd21Ni5 intermetallic phase in two-layer Cd-Ni samples has been studied at hydrostatic pressures 0.05–0.9 GPa and at temperatures 200–280°C. Arrhenius equations for both interdiffusion through the growing phase layer and the interfacial reaction have been obtained for different pressures. The activation volumes have been found to be 0.9V0 for interdiffusion and 1.6V0 for interfacial reaction, where V_0 ≈ 1.8 × 10-29m3 is the average volume per atom in the Cd21Ni5 lattice. Atomistic mechanisms of intermetallic growth are discussed.
    Type of Medium: Electronic Resource
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