ZIB

1

Electronic Resource

Initial interface formation study of the Mg/Si(111) system (1995)

An, K. S. ; Park, R. J. ; Kim, J. S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 1151-1155

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The initial interface and silicide formation induced by Mg adsorption on the Si(111)7×7 surface have been studied using low-energy electron diffraction, x-ray photoelectron spectroscopy, and synchrotron radiation photoelectron spectroscopy. At room temperature, it is found that Mg atoms are preferably adsorbed on top sites of Si adatoms and rest atoms on the Si(111)7×7 surface and with increasing of Mg deposition, a Mg2Si epitaxial layer is formed and the surface structure transforms from the diffuse (1×1) phase into the (2/3(square root of)3×2/3(square root of)3)R30°. After growing up to a critical thickness, the Mg film grew in a disordered phase on the epitaxial layer. The Fermi level of the Mg2Si film is positioned at 0.51±0.05 eV above the valence band maximum. On the other hand, at 300 °C the Mg2Si epitaxial layer was formed in the (1×1) phase on the Si(111)7×7 and grew up to a critical thickness in the initial stage. For the successive evaporation, the Mg film grew in a disordered phase on the Mg2Si(111)1×1 surface. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360349

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Structure and crystallization of low-pressure chemical vapor deposited silicon films using Si2H6 gas (1992)

Hong, C. H. ; Park, C. Y. ; Kim, H.-J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 5427-5432

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Microstructures of silicon films deposited on SiO2 substrates by low-pressure chemical vapor deposition using Si2H6 gas were investigated and compared to those using conventional SiH4 gas by transmission electron microscopy and x-ray diffraction. The deposition rate of the Si2H6 process was about ten times higher than that of SiH4 process at low temperatures (〈550 °C). The transition deposition temperature from amorphous to polycrystalline film was found to be around 580 °C, which was similar to that of the SiH4 process. The film deposited at 600 °C was partially crystalline and had equi-axed grains with the largest average grain size of 0.3 μm while the films using SiH4 has needle-like columnar grains with smaller sizes (200 A(ring)). The x-ray diffraction analysis showed that the structural disorder to amorphously deposited Si films increases as deposition temperature decreases. The grain size in the film after crystallization at 600 °C strongly depended on the deposition temperature and the deposition rate, producing a larger grain size at a lower deposition temperature and/or at a higher deposition rate (Si2H6 deposition compared to SiH4 deposition). The apparent increase in grain size can be explained as a result of the lowered number of crystal nuclei due to a decrease in the number of pre-existing microcrystallites serving as heterogeneous nucleation seeds. When the deposition rate was lower than the critical value (approximately 2–4 nm/min), the grain size in the crystallized film decreased for both SiH4 and Si2H6 films. The maximum grain sizes were 4.5 and 0.3 μm at the deposition temperatures of 485 and 550 °C for the films using Si2H6 and SiH4 gases, respectively.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350565

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3

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Superconducting properties of high-Tc Bi"1"."6Pb"0"."4Ca"2Sr"2Cu"3Oy superconductor

Lee, S.-G. ; Kim, Y.-C. ; Park, C.-Y. ; [et al.]

Amsterdam : Elsevier

Physica B: Physics of Condensed Matter 169 (1991), S. 657-658

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ISSN: 0921-4526

Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Topics: Physics

Type of Medium: Electronic Resource

URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(91)90374-N

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4

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High-performance InGaAs/InP avalanche photodiode for a 2.5 Gb s-1 optical receiver (1995)

Park, C. Y. ; Hyun, K. S. ; Kang, S. K. ; [et al.]

Springer

Optical and quantum electronics 27 (1995), S. 553-559

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ISSN: 1572-817X

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract High-speed mesa type SAGCM avalanche photodiodes for 2.5 Gb s-1 optical receivers have been realized for the first time. The device is designed by dimensional analysis based on the electric field distribution in a multiplication layer and a charge plate layer. Very low dark current and high gain are obtained with an active region of 30 μm diameter. From the 1.55 μm wavelength 2.488 Gb s-1 transmission experiment, sensitivity of-33.6 dBm is measured using pseudorandom (223–1) NRZ patterns.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00563597

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Optimization of erythritol production by Candida magnoliae in fed-batch culture (2000)

Ryu, Y-W ; Park, C Y ; Park, J B ; [et al.]

Springer

Journal of industrial microbiology and biotechnology 25 (2000), S. 100-103

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ISSN: 1476-5535

Keywords: Keywords: Candida magnoliae; erythritol; fed-batch culture

Source: Springer Online Journal Archives 1860-2000

Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology

Notes: A two-stage fed-batch process was designed to enhance erythritol productivity by the mutant strain of Candida magnoliae. The first stage (or growth stage) was performed in the fed-batch mode where the growth medium was fed when the pH of the culture broth dropped below 4.5. The second stage (or production stage) was started with addition of glucose powder into the culture broth when the cell mass reached about 75 g dry cell weight l−1. When the initial glucose concentration was adjusted to 400 g l−1 in the production stage, 2.8 g l−1 h−1 of overall erythritol productivity and 41% of erythritol conversion yield were achieved, which represented a fivefold increase in erythritol productivity compared with the simple batch fermentation process. A high glucose concentration in the production phase resulted in formation of organic acids including citrate and butyrate. An increase in dissolved oxygen level caused formation of gluconic acid instead of citric acid. Journal of Industrial Microbiology & Biotechnology (2000) 25, 100–103.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1038/sj.jim.7000039

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