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  • 1
    Electronic Resource
    Electronic Resource
    Direct imaging of a biased p-n junction with conductance mapping (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3745-3749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report characterization of Si p-n junction arrays using simultaneous conductance imaging and constant current mode (topographical) scanning tunneling microscopy imaging over a range of reverse bias conditions. Both constant current and conductance imaging of the electrically different regions (n, p, and inverted region) show a pronounced dependence on applied p-n junction bias. Tunneling spectra measured across the p-n junction show that the conductance contrast agrees well with the expected variation due to tip-induced band bending. Taken in combination with the topographical image, conductance images can be used to characterize spatial variations of carrier densities across the device. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1453507
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  • 2
    Electronic Resource
    Electronic Resource
    Polarity dependence in pulsed scanning tunneling microscopy fabrication and modification of metal nanodots on silicon (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2139-2143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the fabrication and modification of gold and aluminum nanodots on Si (100) with scanning tunneling microscopy (STM). Dots of ∼10 nm diameter were deposited on a Si (100) substrate by the application of a voltage pulse between a coated STM tip and the sample. The pulse duration required for dot formation is several orders or magnitude longer than on metal substrates, and depends both on dopant type and concentration. Modification of existing nanodots was carried out by the application of additional, larger voltage pulses. For Au, negative tip pulses increase the size of a Au dot, while positive pulses allow "erasure" of Au dots. In contrast, negative tip pulses result in erasing Al dots while positive pulses lead to enlarging Al dots. The sense of the polarity dependence for the fabrication and modification of dots is consistent with the calculated difference in threshold for field evaporation between Au and Al negative and positive ions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495889
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  • 3
    Electronic Resource
    Electronic Resource
    Low-energy electron point source microscope with position-sensitive electron energy analyzer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4304-4307 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low-energy electron point source microscope equipped with a position-sensitive energy analyzer is constructed. A nanometer-sized feature can be zoomed in and its energy-loss spectrum can be measured with a retarding field-type energy analyzer mounted in front of the imaging screen. The geometric and the electronic structures of carbon nanotubes are measured with the present system. Interference between the scattered and the transmitted electron beams through the carbon nanotubes is observed using an atomically sharp field emitter. The electron energy-loss spectrum shows two prominent peaks at ∼7 and 16–17 eV, which are identified as the π plasmon and (π+σ) surface-plasmon peaks. This result is consistent with the measurements of high-energy electron energy-loss spectroscopy as well as the theoretical calculation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150070
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  • 4
    Electronic Resource
    Electronic Resource
    Interference pattern of a coherent electron beam by localized leakage magnetic field (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1745-1747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the origin of interference patterns at the edge of nanometer-scale Co protrusions observed by low-energy electron point source (LEEPS) microscopy. We find evidence that those interference patterns are due to the phase shift of a coherent electron beam by a localized magnetic field. Typical interference patterns have an apparent size of 10–100 nm and a star-like shape, which are dependent on the sharpness of the Co protrusion. After preparing a ferromagnetic nanoparticle in a saturation remanent state by applying a strong magnetic field, we observed the deflection of the interference pattern. This phenomenon is consistent with the theoretical prediction based on a magnetostatic model. The capability of mapping the local magnetic field suggests that LEEPS microscopy is potentially applicable as an imaging tool of magnetic field with nanometer-scale resolution. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352693
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