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  • 1
    Digitale Medien
    Digitale Medien
    Electrical characteristics and thermal stability of n+ polycrystalline- Si/ZrO2/SiO2/Si metal–oxide–semiconductor capacitors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 414-419 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated the thermal stability of n+ polycrystalline-Si(poly-Si)/ZrO2(50–140 Å)/SiO2(7 Å)/p-Si metal–oxide–semiconductor (MOS) capacitors via electrical and material characterization. The ZrO2 gate dielectric was prepared by atomic layer chemical vapor deposition using ZrCl4 and H2O vapor. Capacitance–voltage hysteresis as small as ∼12 mV with the flatband voltage of −0.5 V and the interface trap density of ∼5×1010 cm−2 eV−1 were attained with activation anneal at 750 °C. A high level of gate leakage current was observed at the activation temperatures over 750 °C and attributed to the interfacial reaction of poly-Si and ZrO2 during the poly-Si deposition and the following high temperature anneal. Because of this, the ZrO2 gate dielectric is incompatible with the conventional poly-Si gate process. In the MOS capacitors having a smaller active area (〈50×50 μm2), fortunately, the electrical degradation by further severe silicidation does not occur up to an 800 °C anneal in N2 for 30 min. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1425073
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  • 2
    Digitale Medien
    Digitale Medien
    Boron penetration and thermal instability of p+ polycrystalline-Si/ZrO2/SiO2/n-Si metal-oxide-semiconductor structures (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 65-68 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report boron penetration and thermal instability of p+ polycrystalline-Si (poly-Si)/ZrO2 (100 Å)/SiO2 (∼7 Å)/n-Si metal-oxide-semiconductor (MOS) structures. The flatband voltage shift (ΔVFB) of the p+ poly-Si/ZrO2/SiO2/n-Si MOS capacitor as determined by capacitance–voltage measurement was ∼0.18 V, corresponding to a p-type dopant level of 1.1×1012 B ions/cm2 as the activation temperature increased from 800 to 850 °C. Additional ΔVFB of ∼0.24 V was measured after the anneal from 850 to 900 °C. Noticeable boron penetration into the n-type Si channel as observed by secondary ion mass spectroscopy also confirmed the VFB instability with activation annealing above 850 °C. An abnormal decrease of accumulation capacitance was also found after anneal at 900 °C due to an excessive leakage current which was attributed to the formation of ZrSix nodules at the poly-Si/ZrO2 interface. We observed 4–5 orders of magnitude lower leakage current from the small-size capacitors (〈50×50 μm2) up to the activation anneal of 850 °C for 30 min, while the formation of interfacial ZrSix nodules at 900 °C cannot be avoidable even at 0.6-μm-wide gate lines. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1419207
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  • 3
    Digitale Medien
    Digitale Medien
    Effect of pre-amorphization of polycrystalline silicon on agglomeration of TiSi2 in subquarter micron Si lines (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4943-4948 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated the effect of C49-to-C54 conversion behavior on the agglomeration of Ti-silicide fabricated on subquarter micron polycrystalline Si lines by comparing pre-amorphized samples with conventional ones. Pre-amorphization of polycrystalline Si enhances the C49-to-C54 transformation on subquarter micron linewidths, however, it results in the early development of macroscopic grooves during the second rapid thermal annealing. From these results, we suggest the existence of an extra thermal budget during the second rapid thermal annealing of the pre-amorphized samples, which deteriorates the thermal stability of the C54-TiSi2 featured line. It is also shown that C49-to-C54 transformation on a 0.2 μm linewidth in the conventional samples has two kinds of competing factors when postannealing is added. One is the tendency of C54 transformation and the other is agglomeration of C49-TiSi2 grains. During high temperature annealing (〉850 °C), C49-TiSi2 has been agglomerated by a thinning mechanism instead of transformation into the C54 phase. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371523
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  • 4
    Digitale Medien
    Digitale Medien
    Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6275-6280 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report interface and dielectric reliability characteristics of n+ polycrystalline-silicon (poly-Si)/Al2O3/Si metal–oxide–semiconductor (MOS) capacitors. Al2O3 films were prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor. Interface state density (Dit) and dielectric reliability properties of n+ poly-Si/Al2O3/Si MOS structures were examined by capacitance–voltage, conductance, current–voltage, and time-dependent dielectric breakdown measurements. The Dit of the n+ poly-Si/Al2O3/Si MOS system near the Si midgap is approximately 8×1010 eV−1 cm−2 as determined by the conductance method. Frequency dispersion as small as ∼20 mV and hysteresis of ∼15 mV were attained under the electric field of ±8 MV/cm. The gate leakage current of ∼36 Å effective thickness Al2O3 dielectric measured at the gate voltage of −2.5 V is ∼−5 nA/cm2, which is approximately three orders of magnitude lower than that of a controlled oxide (SiO2). Time-dependent dielectric breakdown data of Al2O3/Si MOS capacitors under the constant current/voltage stress reveal excellent charge-to-breakdown characteristics over controlled oxide. Reliable gate oxide integrity of Al2O3 gate dielectric is manifested by the excellent distribution of gate oxide breakdown voltage on 128 million MOS capacitors having isolation edges. Extracted time constant and capture cross section of the Al2O3/Si junction are discussed. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1368869
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  • 5
    Digitale Medien
    Digitale Medien
    Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis-dimethyl-amino titanium in the Cu/TiN/Si structure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4182-4184 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated diffusion barrier performance of chemical vapor deposition (CVD) TiN films prepared using tetrakis-dimethyl-amino titanium, Ti[N(CH3)2]4, to copper in the Cu/TiN/Si structure. The in situ treatment of the TiN films using N2/H2 plasma was found to significantly improve barrier performance against copper diffusion. The plasma-treated TiN films were stable up to 650 °C but as-deposited TiN films showed an evidence of copper diffusion into silicon even after annealing at 550 °C. The causes of the different effectiveness as a copper diffusion barrier of the two types of the CVD TiN films were discussed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116979
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  • 6
    Digitale Medien
    Digitale Medien
    Suppressed boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor structures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3177-3179 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate a suppressed boron penetration in p+ polycrystalline-Si (poly-Si)/Al2O3/n-Si metal–oxide–semiconductor (MOS) capacitors using a remote plasma nitridation (RPN) of Al2O3 surface. The B penetration was sufficiently suppressed for temperature to 850 °C in N2 for 30 min as manifested by the negligible flat band shift (ΔVFB) and insignificant B diffusion. The nitrogen (N) incorporation in Al2O3 surface appears to effectively impede the B diffusion into the Si channel. Increased gate leakage current for the n+ poly-Si/RPN-Al2O3/p-Si n-type MOS capacitors was observed and attributed to the reduced band gap energy of RPN-Al2O3 due to the formation of AlN and bulk defects due to RPN. Optimization of N concentration is required for the suppressed B penetration and leakage reduction. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1474603
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  • 7
    Digitale Medien
    Digitale Medien
    Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2514-2516 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate the impact of atomic-layer-deposited TiN gate on the characteristics of W/TiN/SiO2/p-Si metal–oxide–semiconductor (MOS) systems. Damage-free gate oxide quality was attained with atomic-layer-deposition (ALD)–TiN as manifested by an excellent interface trap density (Dit) as low as ∼4×1010 eV−1 cm−2 near the Si midgap. ALD–TiN improved the Dit level of MOS systems on both thin SiO2 and high-permittivity (high-k) gate dielectrics. The leakage current of a MOS capacitor gated with ALD–TiN is remarkably lower than that with sputter-deposited TiN and poly-Si gate at the similar capacitance equivalent thickness (CET). Less chlorine content in ALD–TiN films appears to be pivotal in minimizing the CET increase against postmetal anneal and improving gate oxide reliability, paving a way for the direct metal gate process. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1468273
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  • 8
    Digitale Medien
    Digitale Medien
    Amorphous {100} platelet formation in (100) Si induced by hydrogen plasma treatment (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 74-77 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The defect formation in (100) Si at low temperatures during electron cyclotron resonance hydrogen plasma treatment has been studied. The temperature effect on crystalline defect morphology is studied by transmission electron microscopy and high resolution transmission electron microscopy. A high density of hydrogen-stabilized {111} platelets is observed at 240 °C, whereas a large number of amorphous {100} platelets is observed at 385 °C. The formation of amorphous {100} platelets without {111} platelets at 385 °C is reported. The amorphous {100} platelet at 385 °C results from the precipitation of oxygen promoted by hydrogen-enhanced oxygen diffusion. The low-temperature photoluminescence study and the spreading resistance profiles for the hydrogenated Si support the proposed mechanism of the amorphous {100} platelet. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364098
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  • 9
    Digitale Medien
    Digitale Medien
    Physicochemical Characteristics of ZnS Immobilized on Spherical Activated Carbon for Removing HA(Humic Acid) (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 569 (Jan. 2008), p. 37-40 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Notizen: In this study, spherical activated carbons contained ZnS(Zn-SPAC) were successfullyprepared through carbonization/activation processes. Strong acid ion exchange resin as startingmaterial of Zn-SPAC was treated by 0.01 N zinc solution. Ion exchange treatment was performedfrom one time to three times for controling zinc content. The ion exchanged resins was activatedunder N2/H2O-vapor atmosphere at 900 °C for 0.5 hr following by carbonization treatment at 700 °Cunder N2 atmosphere. The Zn-SPAC samples were measured physicochemical characteristics such asX-ray patterns, SEM image, energy dispersive X-ray spectra, BET specific surface area, intensity andzinc content and used to remove humic acid(HA) in batch reactor for measuring photochemicalactivity. The X-ray patterns were appeared ZnS type. The Zn-SPAC had large BET specific surfacearea and their shape was spherical with a diameter about 350 ~ 400 μm. When the Zn-SPAC weredosed in UV reactor, the HA removal efficiency increased upto 60 % at 4hr. The order hand, the HAremoval efficiency by only UV-C(λmax =254nm) irradiation was not good about 15 %. Therefore,we infer that the Zn-SPAC have good photochemical activity and presented possibility ofphotocatalyst for water purification
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.569.37.pdf
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  • 10
    Digitale Medien
    Digitale Medien
    Biological de-inking of waste paper using modified cellulase with polyoxyethylene (1999)
    Springer
    Biotechnology techniques 13 (1999), S. 49-53 
    Details
    ISSN: 1573-6784
    Schlagwort(e): De-inking ; enzyme ; modified cellulase ; polyoxyethylene
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: Abstract Modified cellulase with polyoxyethylene was applied to de-ink waste papers and the weight ratio of modified cellulase to paper was varied from 0.05 to 2% (w/w). During mechanical pulping, the cellulase enhanced the detachment of the ink particle from the paper by partial hydrolysis of the fiber. Polyoxyethylene caused foaming and removed the detached ink particles by floatation. The new biological de-inking process improved the physical properties while maintaining the same de-inking ability. Reprocessed paper freeness, whiteness, and tensile strength increased by 31%, 13%, and 24%, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1008839630849
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