ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality Zn1−xMgxO(0.00≤x≤0.49) thin films were epitaxially grown at 500–650 °C on Al2O3(00⋅1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in the films up to 49 at. %, the c-axis constant of the films decreased from 5.21 to 5.14 Å and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band-edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent properties of the alloy films are also discussed. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1405811
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