ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Polycarbosilane (PCS) thin films were deposited on silicon (and other) substrates and heat treated under vacuum (∼10--6〉torr)at temperatures in the range of 200°–1200°C. At temperatures in the range of 1000°–1200°C, the initially amorphous PCS films transformed to polycrystalline ß-silicon carbide (ß-SiC). Although PCS films could be deposited at thickness up to 2 μm, the films with thicknesses 〉1 μm could not be transformed to SiC without extensive cracking. The resulting SiC coatings were characterized using Fourier transform infrared spectroscopy, glancing-angle X-ray diffractometry, secondary-ion mass spectroscopy, Raman spectoscopy, transmission electron microscopy, and scanning electron microscopy. The temperature and time dependence of the amorphous-to-crystalline transition could be associated with the evolution of free carbon, oxygen, and hydrogen in the films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.1997.tb03124.x
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