ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The major objective of our studies was the thermodynamic analysis of the nSiС+SiO2system and revealing potentialities for the implementation of the SiC gas-phase transportconditions. As a result of thermodynamic scanning of the chemical activity of nSiС+SiO2 systemthe conditions for implementing the SiC gas-phase transport were found out within a widetemperature range. It was found out that the basic process in the gas-phase transport of siliconcarbide is:SiCs + SiOg→ 2Sig + СОg SiC evaporation at T22Sig + СОg → SiCnanowhiskers + SiOg SiC deposition at T1Sequential evaporation and deposition of silicon carbide result in the growth of SiC crystalsfrom a gas phase. The processes of SiC gas-phase transport and deposition were experimentallyrealized. Synthesized were SiC nanocrystals over 300 μm long, ~ 300 nm in diameter that forms athree-dimensional subskeleton inside the carbon skeleton
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.775.pdf
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