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Digitale Medien

Nondestructive characterization of oxygen-ion-implanted silicon- on-insulator using multiple-angle ellipsometry (1988)

Dutta, Pradip ; Candela, George A. ; Chandler-Horowitz, Deane ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 2754-2756

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Silicon-on-insulator formed by high-dose and high-energy oxygen ion implantation in silicon, called SIMOX (separation by implanted oxygen), has been characterized nondestructively by multiple-angle ellipsometry using a He–Ne laser at 632.8 nm. A multilayered model exhibiting two interlayers, one between the top silicon layer and the buried oxide layer and the other between the buried oxide and the substrate silicon, offers a simple representation of SIMOX. The difference between low-temperature furnace anneal (1150 °C) and an additional high-temperature rapid thermal anneal (1150+1350 °C) on as-implanted wafers is shown by the better agreement between the theoretical model and the experimental results for the high-temperature annealed SIMOX sample.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.341620

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Digitale Medien

Proximity effect reduction using thin insulating layers (1993)

Rhee, Kee Woo ; Peckerar, Martin C.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 533-534

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: In this letter, we demonstrate a novel method for reducing or eliminating e-beam proximity effect in patterning tungsten for use as an x-ray mask absorber material. The method involves interposting a thin (200 nm) layer of low atomic weight insulating material (such as SiO2) between the resist and the underlying substrate. Examples are shown in which gratings of 0.2 μm lines with a 0.5 μm period were written without dose correction for proximity effect compensation.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.108903

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