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  • 1
    Electronic Resource
    Electronic Resource
    Transient device modeling using the Lei-Ting hydrodynamic balance equations (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1891-1900 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transient semiconductor device simulation model based on the recently developed Lei-Ting hydrodynamic balance equations is presented. Unlike other hydrodynamic models, where the various relaxation rates are imported from Monte Carlo calculations or simply assumed to be constant, our model calculates these relaxation rates within the simulation process, as functions of the electron drift velocity, electron temperature, as well as the electron density. Without any complicated mathematics, a decoupled method with a relatively large time step has been applied to the transient simulation on a one-dimensional ballistic diode. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363003
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    On the different physical roles of hysteresis and intrinsic oscillations in resonant tunneling structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1515-1525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic sources based upon resonant tunneling diodes (RTDs) usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy-storage mechanisms solely within the RTD and characterizes the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear "access'' resistance and quantum-well inductance is responsible for the hysteresis, "plateaulike'' behavior, and bistability associated with the intrinsic current–voltage (I–V) characteristic. Furthermore, a new circuit-level representation which accurately incorporates the nonlinear dependencies into these heretofore "linear'' equivalent-circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I–V characteristics of the RTD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360994
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-frequency capacitive effects in resonant tunneling diodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2908-2913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD's high-frequency behavior and device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355292
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    Paper (German National Licenses)
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