ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract A comparison is made of how the quantum efficiencies for photoelectric conversion in p-n-and m-s-structures based on GaAs depend on temperature. For photon energies less than or the same order as the width of the band gap, the temperature dependences of the p-n-and m-s-structures are similar. In the range of photon energies larger than the width of the band gap, the quantum efficiency of p-n-structures is temperature independent, whereas the quantum efficiency of m-s-structures exhibits a strong temperature dependence. A qualitative explanation of this phenomenon is given.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187786
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