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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2807-2809 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance characteristics of rf power amplifiers will be significantly enhanced if a cathode source capable of producing current densities greater than 10 A/cm2 under gigahertz modulation can be created. Characterization of single- and multiple-tip arrays is imperative to determine performance characteristics in order to design and implement inductive output amplifiers (IOA): knowledge of the beam spread is paramount in the design of the helix or cavity power extraction region. Nevertheless, a simple analytic model for gated field emitters for understanding the spatial dispersion of the emitted electrons has not emerged. We provide such a model, approximating the tip by a smooth sphere and the gate by a ring of charge (Saturn model), and correlate it with experimental measurements made on a single Spindt-type molybdenum field emitter using a nanofabricated anode whose position from the emitter was determined using laser interferometry. Methods used to correlate theory with experiment are explained, and the dependence of the beam profile on tip sharpness, gate diameter, anode distance, and tip work function are examined. There is good agreement between theory and experiment. Measurement has shown that the rms spread angle is between 15° and 29°.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 2 (1959), S. 245-261 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7098-7110 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A small-signal theory of a field-emission-array distributed amplifier consisting of two microstriplike transmission lines is developed to calculate the premodulation in the input channel and the gain in the output channel. A first-order perturbation analysis is used to treat the beam-wave coupling in this device within the framework of a cold fluid model. The dependence of the linear gain on frequency, beam voltage, beam current, and the circuit parameters is derived to determine the parameter range for operation of the device. It is found that the height of the circuit is restricted to lie between 80 and 120 μm to maintain high electronic gain and low loss arising from the finite conductivity of the metal surfaces. In an output line having a substrate with a relative dielectric constant, εr=4, a net gain of 7 dB/cm is calculated with a beam voltage of 60 V and a beam current of 2.14 A/cm in each wedge of a seven-wedge emitter array. As the beam voltage is increased in the range 60–100 V, the net gain decreases from 7.0 to 3.0 dB/cm, while the frequency for maximum gain increases from 50 to 80 GHz with a corresponding increase in the bandwidth. The small-signal instantaneous bandwidth is in excess of 60%.
    Type of Medium: Electronic Resource
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