Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 1869-1870
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Strong photoluminescence with sub-band-gap photon energies has been observed in fine Si particles prepared by the gas-evaporation technique. After surface oxidation, the Si particles show above-band-gap photoluminescence, the band tail covering the visible light region. The amount of the increased apparent band gap (0.3 eV) estimated from this blueshift can be explained by a quantum-size effect expected to be observed in Si quantum dots with a diameter of 50 A(ring).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349510
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