ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We identify the VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC samples. Based on the analysis of new photo-excited EPR spectra, and supported by theoretical calculations, it was possible to establish its microscopic structure and to conclude that this complex is formed from the first product of the Si-vacancy annealing, the VSiCSi complex (also known as P6/P7 centers)
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.477.pdf
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