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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 35 (1979), S. 689-693 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The key features leading to low-energy grain boundaries in metals are discussed by reference to computer-simulated structures and geometrical analysis in terms of atom packing. Low energy is found to be associated with boundary structures consisting of relatively dense packing, and this can in turn be expressed in terms of the space-filling packing of coordination polyhedra. The geometrical method of analysis is shown to be well suited to the identification of interfacial sites for segregated impurities.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 341-351 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Circuit mapping is employed to study the defect content of buckytubes and carbon nanoparticles. The topological analysis enables the connection with the well established defect theory of crystalline materials. The complementarity between defect models of two- and three-dimensional structures is considered as well as the significance of dislocation descriptions of these materials. In accordance with recent experimental observations, the possibility of three-dimensional hexagonal graphitic stacking of atoms in these structures is examined through the introduction of appropriate defects that are admissible in graphite. Defects in graphene sheets introduce cap closure of isolated tubules and changes in tubule orientation, radius and helicity. In multilayered tubes, appropriate defects can accommodate curvature among adjacent sheets so that the ...ABAB... stacking is preserved. However, the graphite stacking is generally destroyed in multilayered caps owing to the lack of appropriate graphite defects for their accommodation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Interface science 4 (1997), S. 129-138 
    ISSN: 1573-2746
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Junction lines, where three or more interfaces meet in polycrystalline materials, are analysed from a topological point of view. Using circuit mapping methods, it is shown that, in contiguous polyerystals, the dislocations constituting the interfaces always react at junctions according to topological conservation principles. This conclusion is at variance with recent suggestions in the literature. In addition, it is shown that, in certain circumstances, junction lines can themselves exhibit defect character, i.e., dislocation and/or disclination character. Such defects arise in order to accommodate the coexistence of the abutting crystals. Simple examples are illustrated.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Interface science 4 (1997), S. 99-118 
    ISSN: 1573-2746
    Keywords: diffusion ; interfacial defects ; glide ; climb ; defect interaction
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusional flux associated with the motion of interfacial defects is described by an equation expressed in terms of the topological parameters which characterise defects, namely their Burgers vectors and step heights, the defect velocity and the concentration of each atomic species in the two adjacent crystals. This expression demonstrates that glide/climb behaviour of grain boundary defects is analogous to motion of dislocations in single crystals; climb motion results if a component of b is perpendicular to the interface plane. However, the situation is more complex in the case of interphase interface defects, but the present approach, which considers the step and dislocation portions of defects separately, enables a straightforward analysis. Several examples are illustrated to show the various possibilities, such as climb motion even when b is parallel to the interface, and glide motion when b is not. The latter case arises in martensitic transformation where the existence of an invariant-plane-strain relation at the interface leads to equal and opposite fluxes to the step and dislocation portions of transformation defects so that overall the motion is diffusionless. Interfacial processes involve the motion and interaction of defects. The present analysis facilitates the consideration of diffusive fluxes associated with defect interaction since the step and dislocation portions can be treated independently. A general expression is derived for the total flux arising, and a particular case, the interaction of transformation dislocations with crystal dislocations which have reached the interface during lattice-invariant deformation in martensite formation, is considered.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Interface science 2 (1995), S. 299-310 
    ISSN: 1573-2746
    Keywords: interfacial defects ; circuit mapping ; electron micrographs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The characterisation of line defects in interfaces, observed using high-resolution electron microscopy, is discussed. Characterisation is carried out by mapping a closed circuit initially constructed around a defect into a reference space. This process has been generalised to incorporate operations other than translations, and has also been expressed mathematically, and thereby related to recent developments based on symmetry theory. Examples of the characterisation of dislocations in twin interfaces in hexagonal-close-packed crystals and an interfacial dispiration are presented as illustrations.
    Type of Medium: Electronic Resource
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