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  • 1
    Electronic Resource
    Electronic Resource
    Proton-transfer chemistry of urazoles and related imides, amides, and diacyl hydrazides (1991)
    s.l. : American Chemical Society
    The @journal of organic chemistry 56 (1991), S. 5643-5651 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00019a034
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5625-5629 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of deposition temperature on growth, composition, structure, adhesion properties, stress, and resistivity of chemically vapor deposited W deposited purely by SiH4 reduction of WF6 are discussed. At lower deposition temperatures, due to incomplete Si reduction reaction, a small amount of Si is incorporated in the film. This elemental Si in W is responsible for the observed high stresses and high resistivities over a wide temperature range. With the increase in the deposition temperature, the conversion of incorporated Si as well as the initial Si reduction are taking place, stimulating increased grain growth and thereby relieving stress and reducing resistivity. The optimum values for stress and resistivity are achieved around 500 °C, as Si content is at its minimum. At higher temperatures the reaction between residual Si and W, is the prime cause of resistivity increase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346974
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  • 3
    Electronic Resource
    Electronic Resource
    Non-self-limiting nature of silicon reduction of WF6 in cold wall systems (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1428-1441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper addresses the kinetics and related mechanisms of non-self-limiting nature of Si reduction of WF6 in cold wall systems for the first time. The growth of such films in low-pressure chemical-vapor deposition (LPCVD) and ultrahigh vacuum (UHV) systems is compared. Both systems produce non-self-limiting, uniform, controllable, nonporous films. The growth is controlled by process parameters such as the wafer temperature and WF6 concentration at the wafer surface. The order of the Si reduction reaction is 0.5 in the concentration of WF6. The tungsten films deposited in the LPCVD system contaminated with water vapor are thicker than the films grown in the UHV system even when the temperature is below 450 °C. Such thicker films are produced as a result of the formation of an amorphous W-O layer. From the thermodynamic considerations, the origin of W-O layer is attributed to a parallel reaction between water vapor, WF6, and substrate Si. The beneficial role played by the W-O layer is that it prevents any volume shrinkage of the converted layer and restricts lateral encroachment. In the absence of such a layer as in the case of the UHV system, severe volume shrinkage and encroachment are observed. A theoretical model together with physical mechanisms explaining the non-self-limiting phenomenon are proposed. The mechanism suggests that a fine-grained W structure surrounded by a W-O layer, formed in the LPCVD system, assists faster out-diffusion of Si through the tungsten films compared to the UHV system. The higher values of the diffusion coefficient for Si out-diffusion through films grown in the LPCVD system as compared with the UHV system support this mechanism. The out-diffused Si is substituted to W by reduction reaction to complete the film growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351265
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  • 4
    Electronic Resource
    Electronic Resource
    Miniature high pressure cell for transport property measurements down to 2 K (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1336-1338 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A miniature high-pressure cell for electrical and galvanomagnetic measurements down to 2 K has been designed and fabricated. The Bridgman anvils are made of either tungsten carbide, or reinforced alumina, for pressures up to 8 and 4 GPa, respectively. This cell is calibrated both at high pressures and at low temperatures. The pressure clamped at room temperature is not found to vary significantly when cooled down to liquid helium temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141186
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier compensation and scattering mechanisms in p-GaSb (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2847-2853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hole transport properties of gallium antimonide with various degrees of tellurium compensation have been investigated in the temperature range of 4.2–300 K. For the undoped GaSb, the p-type conductivity arises from a doubly ionizable native defect VGa GaSb. In the Te compensated samples, apart from the Te-donor level and the VGaGaSb center, an acceptor level resulting from complexation of VGa GaSb with TeSb has been found. This acceptor level lies ∼70 meV above the valence band edge. The concentration of this center depends on the melt composition and the level of Te present in the melt during growth of crystals. Most interestingly, at very low level of Te concentration, an additional triple native acceptor (VGa GaSb VGa) has also been observed. With the increase in Te concentration, the mobility decreases and a shift in the mobility peak to higher temperature is observed. The low-temperature mobility is limited by ionized impurity scattering. At higher temperatures, the scattering mechanisms depend on Te concentration in the sample. In this regime, significant contributions from acoustic, nonpolar optical, and polar optical phonon scattering are observed for samples with low levels of Te. In contrast, the impurity scattering dominates even at room temperature for highly compensated crystals. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363135
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced magnetoresistance in as-deposited oxygen-deficient La0.6Pb0.4MnO3−y thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6861-6863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 °C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator–metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator–metal transition temperature against the 40% GMR in the case of stoichiometric thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360727
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  • 7
    Electronic Resource
    Electronic Resource
    Ferromagnetic La0.6Pb0.4MnO3 thin films with giant magnetoresistance at 300 K (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3923-3925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured, as-deposited La0.6Pb0.4MnO3 thin films have been grown on LaAlO3 by pulsed laser deposition. The films are ferromagnetic metals below 300 K. Giant negative magnetoresistance of over 40% is observed at 300 K at 6 T.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357404
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  • 8
    Electronic Resource
    Electronic Resource
    Molecular and pharmacological characterization of muscarinic receptors in retinal pigment epithelium: role in light-adaptive pigment movements (2005)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 95 (2005), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Muscarinic receptors are the predominant cholinergic receptors in the central and peripheral nervous systems. Recently, activation of muscarinic receptors was found to elicit pigment granule dispersion in retinal pigment epithelium isolated from bluegill fish. Pigment granule movement in retinal pigment epithelium is a light-adaptive mechanism in fish. In the present study, we used pharmacological and molecular approaches to identify the muscarinic receptor subtype and the intracellular signaling pathway involved in the pigment granule dispersion in retinal pigment epithelium. Of the muscarinic receptor subtype-specific antagonists used, only antagonists specific for M1 and M3 muscarinic receptors were found to block carbamyl choline (carbachol)-induced pigment granule dispersion. A phospholipase C inhibitor also blocked carbachol-induced pigment granule dispersion, and a similar result was obtained when retinal pigment epithelium was incubated with an inositol trisphosphate receptor inhibitor. We isolated M2 and M5 receptor genes from bluegill and studied their expression. Only M5 was found to be expressed in retinal pigment epithelium. Taken together, pharmacological and molecular evidence suggest that activation of an odd subtype of muscarinic receptor, possibly M5, on fish retinal pigment epithelium induces pigment granule dispersion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.2005.03512.x
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  • 9
    Electronic Resource
    Electronic Resource
    Dimethyl sulfoxide phase N-H equilibrium acidities for urazole and substituted urazoles: for urazole and 1-substituted urazoles, which proton is more acidic? (1990)
    s.l. : American Chemical Society
    The @journal of organic chemistry 55 (1990), S. 5806-5808 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00310a003
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  • 10
    Electronic Resource
    Electronic Resource
    Sectoral Investigation of Asymmetries in the Conditional Mean Dynamics of the Real U.S. GDP (1999)
    Cambridge, Mass. : Berkeley Electronic Press (now: De Gruyter)
    Studies in nonlinear dynamics and econometrics 3.1999, 4, art2 
    Details
    ISSN: 1081-1826
    Source: Berkeley Electronic Press Academic Journals
    Topics: Mathematics , Economics
    Notes: We investigate asymmetries in the conditional mean dynamics of four sectors of the U.S. GDP data. Since the statistical evidence on nonlinearities in the conditional mean could be influenced by the presence of outliers, or by a failure to model conditional heteroskedasticity, we explicitly account for outliers by assuming that the innovations are drawn from the stable family, and model time-varying volatility by a GARCH(1,1) process. We also allow for the possibility of long memory in the series with fractional differencing. Our results indicate only weak evidence of significant nonlinearities in the conditional mean in some sectors of the GDP.
    Type of Medium: Electronic Resource
    URL: http://www.bepress.com/snde/vol3/iss4/art2
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