Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 2976-2978
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaAs/AlAs (311)A superlattices are studied by cross-sectional high-resolution transmission electron microscopy X-HRTEM. An anisotropic relief on GaAs/AlAs (311)A interfaces with a height up to 6 ML is observed, predominantly aligned along the [2¯33] direction. A strong (up to 12 ML) highly anisotropic modulation of the thickness of the GaAs layers is found, which can explain the in-plane anisotropy of carrier transport previously observed in this system. At the same time, the thickness of the AlAs layers appeared to be nearly constant. The X-HRTEM studies have revealed no 32 Å periodicity of the GaAs/AlAs (311)A interfacial structure, although a distinct (8×1) surface reconstruction of both GaAs and AlAs surfaces was observed by reflection high-energy electron diffraction during growth. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1322632
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